Microwave absorbing material and preparation method thereof

A microwave absorbing material and molecular formula technology, applied in the field of materials, can solve problems such as increasing production costs and coating thickness

Active Publication Date: 2020-11-06
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the above research has improved the microwave absorbing performance of the microwave absorbing material, its coating is relatively thick, which greatly increases the production cost

Method used

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  • Microwave absorbing material and preparation method thereof
  • Microwave absorbing material and preparation method thereof
  • Microwave absorbing material and preparation method thereof

Examples

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preparation example Construction

[0028] The present invention also provides a preparation method of the microwave absorbing material described in the above technical solution, comprising the following steps:

[0029] (1) metal nitrate is mixed with citric acid solution, and gelation reaction is carried out to obtain a gel; the metal nitrate includes bismuth nitrate, lanthanum nitrate and ferric nitrate or lanthanum nitrate and ferric nitrate;

[0030] (2) Drying, ashing and calcining the gel obtained in the step (1) in sequence to obtain a microwave absorbing material.

[0031] In the present invention, metal nitrate is mixed with citric acid solution for gelation reaction to obtain gel; the metal nitrate includes three kinds of bismuth nitrate, lanthanum nitrate and iron nitrate, or two kinds of lanthanum nitrate and iron nitrate. In the present invention, the bismuth nitrate is preferably bismuth nitrate pentahydrate; the lanthanum nitrate is preferably lanthanum nitrate hexahydrate, and the iron nitrate is...

Embodiment 1

[0042] Step (1), according to molecular formula LaFeO 3 Take by weighing lanthanum nitrate hexahydrate 5.35g and ferric nitrate nonahydrate 4.99g (ratio of the amount of substance of lanthanum nitrate hexahydrate and ferric nitrate nonahydrate is 1:1) of purity >=99.9%, then according to metal ion (lanthanum ion and Iron ion) and citric acid mol ratio are 1: 1 and take by weighing citric acid 5.21g, citric acid and distilled water are mixed to obtain citric acid solution (the mass concentration of described citric acid solution is 16.1%), then lanthanum nitrate and ferric nitrate Add it to the citric acid solution and mix it, put the obtained solution into a water bath, and keep constant temperature magnetic stirring at 80°C (stirring speed is 250r / min), and carry out gelation reaction for 3 hours to obtain a gel;

[0043] Step (2), put the gel obtained in step (1) into a blast drying oven and dry at 80°C for 20 hours, and then put the dried product into a muffle furnace after...

Embodiment 2

[0045] Step (1), Bi 0.1 La 0.9 FeO 3 Take by weighing 0.72g of bismuth nitrate pentahydrate, 4.81g of lanthanum nitrate hexahydrate and 4.99g of iron nitrate nonahydrate (the ratio of the amount of substances of bismuth nitrate pentahydrate, lanthanum nitrate hexahydrate and iron nitrate nonahydrate is 0.1 : 0.9: 1), then according to metal ion (lanthanum ion, iron ion and barium ion) and citric acid molar ratio is 1:1 to take by weighing citric acid 5.19g, citric acid and distilled water are mixed and magnetically stirred to obtain citric acid solution ( The mass concentration of described citric acid solution is 16%), then bismuth nitrate, lanthanum nitrate and ferric nitrate are joined in the citric acid solution, gained solution is put into water bath, under 80 ℃ of conditions, continuous constant temperature magnetic stirring (stirring Speed ​​is 250r / min), carry out gelation reaction 3.5h, obtain gel;

[0046] Step (2), put the gel obtained in step (1) into a blast dr...

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Abstract

The invention provides a microwave absorbing material. The molecular formula of the microwave absorbing material is Bi(0-0.3)La(0.7-1)FeO3. The microwave absorbing material provided by the invention has multiple polarizations, which include space charge polarization, dipole polarization and interface polarization, the dielectric loss of the material is reduced, meanwhile, a large number of irregular micropores exist in the material, the pore size distribution is narrow, multiple reflection channels exist, when electromagnetic waves are emitted into the material, the electromagnetic waves are reflected and scattered multiple times in the material, larger electromagnetic wave attenuation is caused, and then the purposes of reducing the thickness of the material and achieving excellent wave absorbing performance are achieved. Experimental results show that the microwave absorbing material provided by the invention can absorb electromagnetic waves in a microwave band of 2-18GHz, the absorption efficiency is greater than 90%, and excellent microwave absorbing performance can be obtained within 1.6-2.0mm thickness.

Description

technical field [0001] The invention relates to the technical field of materials, in particular to a microwave absorbing material and a preparation method thereof. Background technique [0002] With the development of communication technology, 5G technology will be the development trend. During the construction of 5G signal base stations, the high-frequency electromagnetic equipment has a large energy output during work, and the high-frequency electromagnetic radiation formed is strong, which will cause great interference to other electronic equipment and communication facilities, seriously affect people's daily life, and endanger human beings. of good health. Therefore, it is necessary to load microwave absorbing materials on the surface of its equipment to reduce the impact of electromagnetic waves on the environment and human body. [0003] The current microwave absorbing materials mainly include alloy powder, ferrite, rare earth oxide and rubber-based composite materia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G49/00H05K9/00
CPCC01G49/009C01G49/00H05K9/0081C01P2006/42C01P2002/72
Inventor 成丽春黄磊潘顺康周怀营刘永贺
Owner GUILIN UNIV OF ELECTRONIC TECH
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