All-inorganic perovskite red light emitting diode based on cuprous iodide addition

A technology of light-emitting diodes and cuprous iodide, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., to achieve the effects of convenient preparation process, simple preparation and low price

Inactive Publication Date: 2020-11-06
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the perovskite field, cuprous iodide is mostly introduced as a transport layer, but rarely added to the perovskite solution to passivate the defects of the perovskite structure

Method used

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  • All-inorganic perovskite red light emitting diode based on cuprous iodide addition
  • All-inorganic perovskite red light emitting diode based on cuprous iodide addition
  • All-inorganic perovskite red light emitting diode based on cuprous iodide addition

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Embodiment 1

[0035] An all-inorganic perovskite light-emitting diode is composed of a transparent conductive substrate, a hole transport layer, an all-inorganic perovskite film, an electron transport layer, an electrode modification layer and a metal cathode electrode arranged in sequence. Wherein, the transparent conductive substrate is ITO transparent conductive glass. All-inorganic perovskite film as CsPbI 2 Br, which is doped with cuprous iodide, and the thickness of the all-inorganic perovskite film is 40 nm. The hole transport layer is PEDOT:PSS with a thickness of 35nm. The electron transport layer is TPBi with a thickness of 40nm. The electrode modification layer is lithium fluoride with a thickness of 1 nm. The metal cathode electrode is an aluminum electrode with a thickness of 100 nm.

[0036] Its preparation method is as follows:

[0037] (1) Clean and dry the ITO transparent conductive glass substrate, then treat the treated ITO substrate with ultraviolet lamp and ozone, ...

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Abstract

The invention relates to an all-inorganic perovskite red light emitting diode based on cuprous iodide addition. The invention discloses an application of cuprous iodide in preparation of an all-inorganic perovskite film. The method for preparing the all-inorganic perovskite film comprises the following steps that an inorganic perovskite precursor solution is prepared, cuprous iodide is doped in the inorganic perovskite precursor solution, the surface of a substrate is coated with the inorganic perovskite precursor solution, and the all-inorganic perovskite film is formed on the surface of thesubstrate after annealing. The invention also provides an all-inorganic perovskite light emitting diode based on the all-inorganic perovskite film. Through doping of cuprous iodide, crystallinity, grain size improvement and device performance of the all-inorganic perovskite are effectively improved, and through a series of gradient doping, the device performance and stability are remarkably changed.

Description

technical field [0001] The invention relates to a light-emitting device, in particular to an all-inorganic perovskite red light-emitting diode based on addition of cuprous iodide. Background technique [0002] At present, the external quantum efficiencies of near-infrared, red and green perovskite light-emitting devices have exceeded 20%, showing good application prospects in the fields of display and lighting. Organic-inorganic perovskites have poor thermal stability, however, all-inorganic perovskites have excellent thermal and photostability due to the absence of organic functional groups. More importantly, all-inorganic perovskites have the advantages of long free carrier diffusion length, high mobility, high absorption, tunable band gap in the entire visible region, low defect density, high crystallinity, and high fluorescence quantum yield. , has great prospect and research value in luminescent applications. In addition, all-inorganic perovskite light-emitting diodes...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/26H01L33/40H01L33/00
CPCH01L33/0083H01L33/26H01L33/40
Inventor 唐建新叶永春李艳青
Owner SUZHOU UNIV
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