Multi-layer phase change film based on alternate stacking of germanium antimony telluride and IV group telluride and application thereof

A germanium antimony telluride and telluride technology, applied in the field of multilayer phase-change thin films, can solve the problems that hinder the application of general-purpose memory and brain-like computing chips, reduce the stability and accuracy of devices, and stabilize service, so as to increase the production cost and the difficulty of preparation, improving stability and accuracy, and ensuring the effect of reliability

Pending Publication Date: 2020-11-17
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, phase change memory products based on germanium antimony tellurium materials have entered the commercial stage, but the devices at this stage still have shortcomings in terms of stability, accuracy and service life, which hinders their application in general-purpose memories and brain-inspired computing chips. On the one hand, the complex structure of the phase change material itself enhances the Peierls deformation, which in turn triggers structural relaxation, resulting in spontaneous resi

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  • Multi-layer phase change film based on alternate stacking of germanium antimony telluride and IV group telluride and application thereof
  • Multi-layer phase change film based on alternate stacking of germanium antimony telluride and IV group telluride and application thereof
  • Multi-layer phase change film based on alternate stacking of germanium antimony telluride and IV group telluride and application thereof

Examples

Experimental program
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Example Embodiment

[0033] The phase change film can be prepared by sputtering method, evaporation method, chemical vapor deposition method, plasma enhanced chemical vapor deposition method, low pressure chemical vapor deposition method, metal compound vapor deposition method, molecular beam epitaxy method, atomic vapor deposition method and atomic vapor deposition method. Any of the layer deposition methods.

[0034] The phase change film can realize phase change through electrical pulses or optical pulses, and can be applied to the fields of phase change memory and brain-like computing chips.

Example Embodiment

[0036] Example 1

[0037] One based on GeSbTe and TiTe 2 Alternately stacked phase change film, the film includes:

[0038] GeSbTe as a phase change layer and TiTe as a barrier layer 2 Alternate stacking of materials, including 2 layers of GeSbTe film and 1 layer of TiTe 2 film;

[0039] The thickness of each layer of GeSbTe film is about 2nm, and each layer of TiTe 2 The thickness of the film is about 1nm, and the overall thickness of the film is about 5nm;

[0040] Among them GeSbTe and TiTe 2 They are all octahedral structures. Van der Waals layers are formed between adjacent layers by van der Waals forces. When GeSbTe is crystallized, TiTe 2 Can be used as a template to speed up the crystallization process of GeSbTe and increase its phase transition rate;

[0041] The GeSbTe layer undergoes a phase change under the action of electrical or optical pulses, and there are at least three stable signal resistance states, including amorphous state, metastable state (cubic phase) and stable...

Example Embodiment

[0046] Example 2

[0047] One based on GeSbTe and ZrTe 2 Alternately stacked phase change film, the film includes:

[0048] GeSbTe material as phase change layer and ZrTe as barrier layer 2 Alternate stacking of materials, including 5 layers of GeSbTe film and 4 layers of ZrTe 2 film;

[0049] The thickness of each layer of GeSbTe film is 7nm, and each layer of TiTe 2 The thickness of the film is 2nm, and the overall thickness of the film is about 43nm;

[0050] Among them GeSbTe and ZrTe 2 They are all octahedral structures. Van der Waals layers are formed by van der Waals forces between adjacent layers. When GeSbTe is crystallized, ZrTe 2 Can be used as a template to speed up the crystallization process of GeSbTe and increase its phase transition rate;

[0051] The GeSbTe layer undergoes a phase change under the action of electrical or optical pulses, and there are at least three stable signal resistance states, including amorphous state, metastable state (cubic phase) and stable stat...

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Abstract

The invention relates to a multilayer phase change film based on alternate stacking of germanium antimony telluride and group IV telluride and application of the multilayer phase change film, the multilayer phase change film comprises phase change layers and barrier layers, the phase change layers and the barrier layers are alternately stacked, wherein there are at least two phase change layers, and there is at least one barrier layer; the phase change layers are germanium antimony telluride films, and the barrier layers are group IV telluride films. Germanium-antimony-tellurium materials andIV-group telluride materials in the film are stacked alternately, germanium-antimony-tellurium serves as a phase change layer to achieve storage, the IV-group telluride materials serve as a blocking layer not to participate in phase change, structural relaxation of the phase change layer materials can be inhibited, the element segregation phenomenon of the phase change layer materials can be hindered, and the stability and accuracy of the phase change memory device can be greatly improved; meanwhile, the germanium-antimony-tellurium material has a relatively high crystallization temperature, so stable service in a high-temperature environment can be ensured. The film can be applied to the fields of phase change memories and brain-like computing chips.

Description

technical field [0001] The invention relates to the technical field of phase-change memory and brain-inspired computing chips, in particular to a multilayer phase-change film based on alternating stacking of germanium, antimony, telluride and group IV telluride and its application. Background technique [0002] In today's information society, the pressure brought by data storage and processing is increasing day by day. The vigorous development of emerging technologies such as big data, cloud computing, and artificial intelligence has also posed great challenges to the performance of existing computing devices. In the face of the imminent data storage crisis, researchers have proposed a variety of new materials and new technologies capable of data storage, in order to achieve a new generation of storage technology for fast reading and writing and stable data storage in the same unit, which is based on phase change The phase change memory of materials has the advantages of lo...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/8828
Inventor 张伟王疆靖周宇星王旭东
Owner XI AN JIAOTONG UNIV
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