Preparation method of electro-optical crystal film, electro-optical crystal film and electro-optical modulator

Abstract

The invention provides a preparation method of an electro-optical crystal thin film, the electro-optical crystal thin film and an electro-optical modulator, and the preparation method of the electro-optical crystal thin film comprises the following steps: preparing a silicon-on-insulator structure, and preparing a protective layer precursor on top silicon of the silicon-on-insulator structure; etching the protective layer precursor and the top silicon layer by using an etching method to form a protective layer and a silicon waveguide layer, forming a groove structure in the protective layer and the silicon waveguide layer after etching, and enabling the height of the groove structure to be equal to the sum of the thickness of the protective layer and the thickness of the silicon waveguidelayer; filling and coating an isolation layer in the groove structure, and flattening the isolation layer until the isolation layer is flush with the protection layer; removing the protective layer ina corrosion manner, depositing and coating the isolation layer, and flattening the isolation layer; and finally, preparing a functional film layer on the coating isolation layer to obtain the electro-optic crystal film. By adopting the scheme, the silicon waveguide layer is protected by the protective layer, the thickness of the coated isolation layer is controllable, the surface is smooth, the coated isolation layer is bonded with the functional film layer, and the propagation of optical signals is not influenced.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a method for preparing an electro-optic crystal thin film, an electro-optic crystal thin film and an electro-optic modulator. Background technique [0002] At present, the processing technology of silicon materials is very mature, and it is also a semiconductor material with more industrial applications. Therefore, silicon materials have been widely used in electronic components. Since the silicon material itself has a centrosymmetric crystal structure, there is no linear electro-optic effect in silicon, so the silicon material cannot be directly used to prepare high-performance electro-optic modulators. For this reason, traditional silicon-based electro-optic modulators usually need to rely on the plasma dispersion effect to solve the above problems. The specific method is to use ion implantation to form a PN junction, and change the silicon density in the silic...

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Problems solved by technology

[0005] This application provides a method for preparing electro-optic crystal thin films, electro-optic crystal thin films and electro-optic modulators to solve the problem of using benzocyclobutene resin as an adhesive to combine silicon materials with lithium niobate crystals in the prior art. Silicon materials and lithium niobate crystals cannot be completely bonded, which affects the propagation of optical signals, which in turn affects the performance of electro-optic modulators

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