Red-emitting quantum dots having narrow full width at half maximum and emission wavelength for application to high-color-purity display, and preparation method therefor

A technology of luminescent wavelength and quantum dots, which is applied in the field of preparation of red luminescent quantum dots, can solve the problems that the quantum efficiency cannot be achieved, and the half-value width of nanoparticles cannot be achieved, so as to improve the quantum efficiency, electron transmission characteristics, and electron mobility Excellent, easy-to-apply effect

Active Publication Date: 2020-11-20
DAEGU GYEONGBUK INST OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] The technical problem to be realized by the present invention is, through the red light-emitting quantum dots and the shell coating method of the present invention, solve the problem that the nanoparticles with the core-shell structure of the environmentally friendly quantum dots cannot reach the half-value width below the critical 40nm half-value width and the quantum efficiency cannot be achieved. To achieve more than 70% of the problem, the quantum dots that can be applied to display screens are provided by preparing the quantum dots of the present invention

Method used

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  • Red-emitting quantum dots having narrow full width at half maximum and emission wavelength for application to high-color-purity display, and preparation method therefor
  • Red-emitting quantum dots having narrow full width at half maximum and emission wavelength for application to high-color-purity display, and preparation method therefor
  • Red-emitting quantum dots having narrow full width at half maximum and emission wavelength for application to high-color-purity display, and preparation method therefor

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preparation example Construction

[0137] The present invention can provide the above-mentioned quantum dots prepared by the above-mentioned preparation method of quantum dots.

[0138] Such quantum dots can achieve good luminous efficiency, color purity, and color reproducibility in a wide range of light-emitting regions from visible light to near-infrared regions, and can protect the surface and internal defects of the core due to external environments. Effect.

preparation example 1

[0140] Zn(In)-P clusters

[0141] 1) After mixing 1mmol of indium acetate, 0.5mmol of zinc acetate, and 4mmol of oleic acid in 10ml of octadecene (ODE) in an Erlenmeyer flask to form a mixture, use the Schlenk line to pass through a reflux condenser After fixing, it was heated at a temperature of 120° C. for 12 hours in a vacuum.

[0142] 2) Fill the Erlenmeyer flask with nitrogen and cool to room temperature.

[0143] 3) will contain 0.66mmol tris (trimethylsilyl) phosphine ((TMS) 3 P) and a solution of 1 ml of tri-n-octylphosphine were quickly poured into the Erlenmeyer flask, and kept at room temperature for 60 minutes.

preparation example 2

[0145]In(Zn)P / ZnSe / ZnS quantum dots

[0146] 1) Mix 5ml of InP quantum dot seeds with 10ml of dry octadecene, and heat to 280°C.

[0147] 2) Use a syringe pump to inject the In(Zn)P clusters prepared in Preparation 1 above at a rate of 1 ml / h to form In(Zn)P quantum dots.

[0148] 3) Cool the above In(Zn)P quantum dots to 150°C.

[0149] 4) Inject 1ml of 0.4M zinc stearate and keep at the same temperature for 30 minutes.

[0150] 5) Put 0.5ml of 0.4M tri-n-octylphosphine selenium (TOP-Se) into the Erlenmeyer flask and keep it at 300°C for 15 minutes.

[0151] 6) After injecting 1.5 ml of zinc stearate, keep it for 10 minutes, then inject 0.6 ml of tri-n-octylphosphine selenium, and keep it at 300° C. for 15 minutes.

[0152] 7) Wait for 10 minutes after injecting 1.5 ml of zinc stearate, then inject 0.6 ml of tri-n-octylphosphine selenium for 15 minutes to coat the ZnSe shell.

[0153] 8) After adding 2 ml of zinc stearate, inject 0.8 ml of tri-n-octylphosphine selenium to...

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Abstract

One embodiment of the present invention relates to a method for preparing InP-based nanoparticles for application to a high-color-purity display, and provides: a technique for synthesizing uniform core quantum dots by providing a method for preparing quantum dots, the method comprising the steps of preparing a mixture comprising InX-based quantum dot seeds, forming an InX-based core by continuously injecting a Zn(In)X-based cluster into the mixture, forming a first shell coated on the In-based core by adding a selenium compound and a zinc precursor to the mixture, and forming a second shell coated on the first shell by adding a sulfur compound and the zinc precursor to the mixture, wherein the first shell is formed from ZnSe, the second shell is formed from ZnS, and X includes phosphorus (P), arsenic (As) or antimony (Sb); and a light emitting layer of a next generation self light-emitting device, the light emitting layer having a color purity improved over that of conventional quantumdots and resolving the stability problem thereof.

Description

technical field [0001] The invention relates to a red light-emitting quantum dot with a light-emitting wavelength and a small half-value width for high-color-purity display screens and a preparation method thereof. The invention relates to a method for preparing red light-emitting quantum dots with light-emitting wavelengths and small half-value widths for high-color-purity display screens. Background technique [0002] Quantum Dot (QD) is a semiconductor nano-sized particle with a limited size in three-dimensional space. In the bulk state, it exhibits good optical and electrical properties that semiconductor materials do not have. . For example, quantum dots can emit light of different colors depending on the size of the particles, even if they are made of the same substance. Through such characteristics, quantum dots have attracted much attention as nanomaterials for a new generation of high-brightness light-emitting diodes (Light Emitting Diode, LED), biosensors (biosen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/56C09K11/62B82Y20/00B82Y40/00
CPCB82Y20/00B82Y40/00C09K11/70C09K11/025C09K11/883C09K11/565C09K11/0811C09K11/623
Inventor 李钟洙R·帕提班
Owner DAEGU GYEONGBUK INST OF SCI & TECH
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