A silicon carbide single crystal growth crucible and growth method

Abstract

The invention discloses a silicon carbide single crystal growth crucible and a growth method. The crucible includes: a raw material chamber for loading silicon carbide single crystal growth raw materials; a growth chamber disposed relatively above the raw material chamber for placing a silicon carbide single crystal seed crystal; at least one graphite container disposed on In the raw material chamber, the height of the graphite container is less than or equal to the filling height of the silicon carbide raw material powder; the graphite container includes: a graphite container body, which is loaded with a chlorine-containing compound; a sealing block, placed on the The graphite container body is located above the chlorine-containing compound; the porous cover is placed above the graphite container body; the sealing block is heated to produce cracks at a temperature greater than or equal to the sublimation temperature of the growth material, and the The chlorine-containing compound releases chlorine gas and hydrogen chloride gas through the crack and the porous cover after being heated. Based on the invention, the carbon / silicon ratio in the silicon carbide single crystal growth atmosphere can be adjusted to improve the crystal quality.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material manufacturing, and in particular relates to a silicon carbide single crystal growth crucible and a growth method. Background technique [0002] Silicon carbide (SiC) material can be used for high temperature resistance, High-frequency, radiation-resistant, and high-power semiconductor device materials have broad application prospects. However, due to the harsh growth conditions of SiC single crystals, they are easily affected by the environment, resulting in product quality defects. For the excellent performance of the device, its growth technology is the key. [0003] At present, when the physical vapor transport method (PVT) is used for the preparation of silicon carbide single crystals, the silicon carbide system is heated and sublimated to produce a variety of sublimation products, including Si, Si2C, SiC2 and other gases. Among them, the equilibrium partial pressure of Si vapo...

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Problems solved by technology

At the same time, because the chemical activity of the silicon atoms inside the liquid-phase silicon is higher than that of the silicon atoms in the crystallized crystal, when the silicon droplet is attached to the surface of the crystal, the carbon atoms near it tend to dissolve into the liquid-phase silicon, resulting in crystallization. The occurrence of defects in

[0004] In addition, during the growth process of silicon carbide single crystal, graphite felt and raw materials used as insulation materials will inevitably absorb nitrogen in the air, which is extremely unfavorable for the prepared silicon carbide single crystal.

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