Laser, infrared and microwave compatible stealth material as well as manufacturing method and application thereof
A stealth material, laser technology, applied in metal material coating process, optics, optical components, etc., can solve the problems of short wavelength, short microwave, less laser wavelength, etc., to achieve film thickness, uniformity control, process optimization Effect
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Embodiment 1
[0043] Optimizing the One-Dimensional Photonic Crystal Structure of Multilayer Film System
[0044] 1. Determine the material of the multilayer film system
[0045] According to the working wavelength of laser, infrared and radar detection in the existing detection technology, determine the fundamental frequency of multi-layer film system photonic crystal: laser band: 1.06, 1.54, 10.6 μm; infrared band 3-5 μm and 8-14 μm; radar band 2- 18GHz, such as figure 2 shown.
[0046] Using the characteristic matrix method to calculate the refractive index and thickness constraint formula of the multilayer film system material:
[0047] Such as image 3 As shown, the present invention mainly considers two kinds of different relative permittivity ε a =n a 2 , ε b =n b 2 , a one-dimensional periodic structure composed of alternately arranged thin film dielectric layers of thickness a and b. The spatial period is d=a+b. The TE mode polarized light with Bloch vector k enters the m...
Embodiment 2
[0126] Optimization of the preparation process of multilayer film system one-dimensional photonic crystal
[0127] 1. Target selection and coating basic process parameters
[0128] The selected targets and specifications are as follows: the target ZnS has a purity of 99.99%, and the specification is Φ60×3mm+Cu (Φ60×2mm); the target Ge has a purity of 99.99%, and the specification is Φ60×5mm; ZnSe, whose purity is 99.99%, has a specification of Φ60×3mm+Cu (Φ60×2mm).
[0129] During the coating process, the distance between the target and the substrate is 50mm, the background vacuum value is 6.0×10-4Pa, the reaction gas is a high-purity Ar gas atmosphere, and the flow rate is 15mL / min.
[0130] 2. Method for calculating film thickness by ellipsometry
[0131] Due to the thin thickness and strong absorption of Ge film and ZnS film, the spectral curve method is not suitable for measuring thickness. This project uses ellipsometry to determine the thickness and deposition rate of ...
Embodiment 3
[0165] Stealth material product and preparation example of the present invention
[0166] A kind of laser, infrared, microwave compatible stealth multi-layer film system material of the present invention, its structural schematic diagram is as follows figure 1 As shown, it is a layered structure. The multilayer film structure of the present invention is prepared by sputtering on PET as a substrate, and the multilayer film structure includes from bottom to top:
[0167] ZnSe(1850nm), Ge(450nm), ZnSe(1850nm), Ge(450nm), ZnSe(1850nm), Ge(450nm), ZnSe(1850nm), ZnS(125nm), ZnSe(1850nm), Ge(450nm), ZnSe (1850nm), Ge (450nm).
[0168] In this embodiment, a research and preparation method of a laser, infrared, and microwave compatible stealth multilayer film structure includes the following steps:
[0169] The first step: according to figure 2 The shown is compatible with the stealth overall target, and the laser wavelength, infrared band, microwave band and their reflection coef...
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