A silicon thermal reduction method for improving the thermal conductivity and mechanical properties of silicon nitride ceramic substrate materials
A silicon nitride ceramic and thermal conductivity technology, applied in the field of inorganic non-metallic materials, can solve the problems of reducing the strength of silicon nitride, grain growth, etc. reduced effect
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Embodiment 1
[0051] With 4mol% Y 2 O 3 and 8mol% MgO as sintering aid, with 88mol% α-Si 3 N 4 Powder, add 0.1wt% Si, mix by ball milling, sieve after drying to obtain uniformly mixed powder; then dry press molding under 30MPa pressure, and then perform cold isostatic pressing under 300MPa pressure; The green body was placed in a BN crucible, and was kept at 1200 °C for 8 h under vacuum for deoxidation pretreatment; then it was sintered at 1900 °C under pressure, where the heating rate was 5 °C / min, N 2 The pressure is 1MPa, and the holding time is 4h; after sintering, it is cooled to 1000°C at a cooling rate of 15°C / min, and then cooled to room temperature with the furnace.
[0052] The thermal conductivity of the silicon nitride ceramic material prepared in Example 1 is 95.50W·m -1 ·K -1 , the three-point flexural strength is 834±24MPa, and the fracture toughness is 8.77±0.21MPa m 1 / 2 .
Embodiment 2
[0054] With 1mol% Y 2 O 3 and 4mol% MgSiN 2 As a sintering aid, with 95mol% α-Si 3 N 4 Powder, add 1wt% Si, mix by ball milling, sieve after drying to obtain uniformly mixed powder; then dry press molding under 30MPa pressure, and then perform cold isostatic pressing under 250MPa pressure; The body was placed in a BN crucible, and was kept at 1200 °C for 8 h under flowing Ar for deoxidation pretreatment; then it was sintered at 1900 °C under pressure, where the heating rate was 10 °C / min, N 2 The pressure is 2MPa, and the holding time is 12h; after sintering, it is cooled to 1000°C at a cooling rate of 15°C / min, and then cooled to room temperature with the furnace.
[0055] The thermal conductivity of the silicon nitride ceramic material prepared in Example 2 is 118.75W·m -1 ·K -1 , the three-point flexural strength is 785±11MPa, and the fracture toughness is 9.98±0.27MPa m 1 / 2 .
Embodiment 3
[0057] With 2mol% Yb 2 O 3 and 8mol% MgO as sintering aid, with 90mol% α-Si 3 N 4 Powder, add 4wt% Si, mix by ball milling, sieve after drying to obtain uniformly mixed powder; then dry press molding under 40MPa pressure, and then perform cold isostatic pressing under 200MPa pressure; The body was placed in a BN crucible, and was held at 1400 °C for 6 h under flowing Ar for deoxidation pretreatment; then it was sintered at 1900 °C under gas pressure, where the heating rate was 10 °C / min, N 2 The pressure is 2MPa, and the holding time is 2h; after the sintering, it is cooled to 1100°C at a cooling rate of 5°C / min, and then cooled to room temperature with the furnace.
[0058] The thermal conductivity of the silicon nitride ceramic material prepared in Example 3 is 89.60W·m -1 ·K -1 , the three-point flexural strength is 856±17MPa, and the fracture toughness is 7.91±0.17MPa m 1 / 2 .
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