Semiconductor device and forming method thereof

Abstract

The invention provides a semiconductor device and a forming method thereof. According to the novel semiconductor device forming method provided by the invention, a monocrystalline silicon gate layer in a high-K metal gate CMOS device formed in the prior art is replaced with an amorphous silicon gate layer, and annealing treatment is carried out on the amorphous silicon gate layer, so that amorphous silicon in an amorphous silicon gate is recrystallized to form a polycrystalline silicon gate; the effective resistance of a gate stack layer in a CMOS device is related to the uniformity of the concentration of the doped ions in a crystalline silicon gate and the permeability of the doped ions, so that the amorphous silicon can be annealed to obtain the polycrystalline silicon with high permeability to the doped ions; and after P type or N type ions are doped in the polycrystalline silicon, a relatively more uniform doping concentration can be obtained, so that the uniformity of the dopingion concentration in the polycrystalline silicon gate layer of the gate structure in the final CMOS device and the penetration degree of doping ions are improved, and the gate resistance is further reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a forming method thereof. Background technique [0002] Semiconductor device fabrication is thus becoming increasingly challenging and pushed towards the limits of what is physically possible. So-called high-k metal gate technology has gained popularity in the fabrication of CMOS devices with typical gate dimensions below 50nm. According to the high-k metal gate manufacturing process flow, the insulating layer included in the gate electrode is composed of a high-k material. This is in contrast to the conventional oxide / polysilicon (poly / SiON) approach where the gate electrode insulating layer is usually composed of oxide, preferably silicon dioxide or oxynitride in the case of silicon-based devices. silicon. At present, the process method for realizing the high-k metal gate in the semiconductor manufacturing process flow is the gate process, a...

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Problems solved by technology

[0003] At present, in the process of forming semiconductor devices using the gate-first process, due to the non-uniformity and low permeability of the single-crystal silicon gate to doped boron ions, the gate resistance of the semiconductor device increases, thereby improving the performance of the semiconductor device. Operating Voltage

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