Perovskite photoelectric detector and preparation method thereof

Abstract

The embodiment of the invention provides a perovskite photoelectric detector, which is characterized in that the detector comprises a double-gate metal oxide thin film transistor and a perovskite photodiode, the double-gate metal oxide thin film transistor is provided with a gate, the perovskite photodiode is provided with an electrode, and the grid electrode of the double-grid metal oxide thin film transistor is connected with the electrode of the perovskite photodiode. The detector provided by the invention combines the advantages of a double-gate metal oxide thin film transistor and a perovskite material, and greatly improves the performance of an optical detector in the aspect of weak light detection.

Description

technical field [0001] The invention relates to the field of photoelectric detection and imaging, in particular to a perovskite photodetector and a preparation method thereof. Background technique [0002] In medical and industrial inspection fields such as X-ray imaging, biomedical fluorescence imaging, and fingerprint imaging, photoelectric sensors, as important components, need to have real-time, low-dose imaging capabilities, and require low power consumption and high sensitivity. [0003] Conventional photodetectors are based on amorphous silicon technology, where an amorphous silicon photodiode (PD) is connected to the drain of an amorphous silicon thin film transistor. In this configuration, an amorphous silicon thin-film transistor acts as an electrical switch, directing the photogenerated charge from the photodiode to the amplifying circuit [0004] In the course of realizing the present invention, the inventor finds that there are at least the following problems i...

AI Technical Summary

Problems solved by technology

[0005] The traditional amorphous silicon thin film transistor (TFT) is limited by the low mobility of the amorphous silicon material, which limits the size of the photodetector pixel, the fill factor and the frame rate of the image sensor after the integrated array. In addition, the amorphous silicon The inherent high cut-off current of TFT results in a large amount of energy consumption even when working in a dark state; at the same time, the weak light signal (or low dose) detection capability of existing photodetectors is greatly limited by the performance of amorphous silicon PDs. However, the noise brought by the dark current of amorphous silicon PD determines the ability of the detector to detect the lowest power of weak light. The noise current of diode is higher than that of transistor, which affects the detection ability of weak light.

Therefore, the photodetectors of traditional amorphous silicon technology have the problems of poor weak light detection ability, high power consumption and low sensitivity.

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