Double-doped resonant cavity uni-traveling carrier photodiode

Abstract

The invention provides a double-doped resonant cavity uni-traveling carrier photodiode. A device is simultaneously processed in an absorption layer and a collection layer. Linear gradient doping is carried out on the absorption layer, so that the forbidden band width of the absorption layer is linearly changed; or stepped distribution is realized on doped material components of the absorption layer, so that the forbidden band width of the absorption layer is gradiently changed, the built-in electric field intensity of the absorption layer is improved, the electron drift time is shortened, andthe device responsivity is improved. An oxidation process is adopted in the collection layer to obtain a partial oxide insulating layer structure of the collection layer, and due to the low refractiveindex characteristic, the parasitic capacitance of the device is reduced, and the response speed of the device is improved. Besides, a first reflector and a second reflector are introduced to the exterior of the integrated device to form a resonant cavity structure, so that the amplitude of incident signal light in a high-Q-value resonant cavity inner field is enhanced, and the quantum efficiencyof the device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a single row carrier photodiode. Background technique [0002] Photodiode (PD) is an important O / E conversion device. It is widely used in the national economy and military fields, and is the core device of application systems such as optical fiber communication, ultra-wideband wireless communication, missile guidance, infrared imaging and remote sensing. Two important indicators of PD are response rate and quantum efficiency. When the photodiode is working, it is difficult to maintain a high response speed when working at a high current density due to the electric field shielding generated by the photogenerated carriers, that is, the space charge effect. Optimizing the external structure to reduce the drift distance of photogenerated carriers and increasing the carrier drift speed to reduce the space charge density of the working device...

AI Technical Summary

Problems solved by technology

When the photodiode is working, it is difficult to maintain a high response speed when working at a high current density due to the electric field shielding generated by the photogenerated carriers, that is, the space charge effect.

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