An organic electroluminescent device containing carbazole as a core compound and its application
An electroluminescent device and organic compound technology, applied in the field of organic electroluminescent devices, can solve the problems of reduced device angle dependence, low light extraction efficiency, etc., and achieve good industrialization prospects, high light extraction efficiency, and high yield. Effect
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Embodiment 1
[0067] Example 1: Synthesis of Compound 8:
[0068]
[0069] Under nitrogen atmosphere, 0.01mol of raw material I-1, 0.025mol of raw material II-1, 0.03mol of sodium tert-butoxide, 5×10 -5 mol Pd 2 (dba) 3 and 5×10 -5 mol tri-tert-butylphosphorus, then add 150 ml of toluene to dissolve it, heat to 100° C., reflux for 24 hours, and observe the reaction by TLC until the reaction is complete. Cool to room temperature naturally, filter, and spin the filtrate until there is no fraction. The resulting material was purified by silica gel column (petroleum ether as eluent) to give Intermediate A-1.
[0070] In a 250ml three-necked flask, under the protection of nitrogen, add 0.01mol of intermediate A-1, 0.015mol of raw material III-1, 150ml of toluene, stir and mix, and then add 5×10 -5 mol Pd 2 (dba) 3 , 5×10-5mol P(t-Bu) 3 , heated to 110°C, refluxed for 24 hours, and observed the reaction by TLC until the reaction was complete. Naturally cooled to room temperature, filt...
Embodiment 2
[0127] Transparent substrate layer 1 / anode layer 2 (ITO(15nm) / Ag(150nm) / ITO(15nm)) / hole injection layer 3(HT-1:P-1=97:3 mass ratio, thickness 10nm) / empty Hole transport layer 4 (HT-1, thickness 130nm) / electron blocking layer 5 (EB-2, thickness 40nm) / light emitting layer 6 (GH-1:GH-2:GD-1=47:47:6 mass ratio, Thickness 40nm) / hole blocking / electron transport layer 7 (ET-1: Liq=1:1 mass ratio, thickness 35nm) / electron injection layer 8 (Yb, thickness 1nm) / cathode layer 9 (Mg:Ag=1: 9 mass ratio, thickness 15 nm) / CPL layer 10 (compound 8 of the present invention, thickness 70 nm).
Embodiment 3
[0129] Transparent substrate layer 1 / anode layer 2 (ITO(15nm) / Ag(150nm) / ITO(15nm)) / hole injection layer 3(HT-1:P-1=97:3 mass ratio, thickness 10nm) / empty Hole transport layer 4 (HT-1, thickness 130nm) / electron blocking layer 5 (EB-3, thickness 90nm) / light emitting layer 6 (RH-1:RD-1=97:3 mass ratio, thickness 40nm) / hole Blocking / electron transport layer 7 (ET-1: Liq=1:1 mass ratio, thickness 35nm) / electron injection layer 8 (Yb, thickness 1nm) / cathode layer 9 (Mg:Ag=1:9 mass ratio, thickness 15nm ) / CPL layer 10 (compound 8 of the present invention, thickness 70 nm).
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