Preparation method of room-temperature semiconductor gas sensing material and sensor

A gas sensor and gas sensing technology, applied in the field of gas sensing, can solve the problems of room temperature sensing performance decline, disappearance, no room temperature sensor finished products, etc., and achieve the effects of unique sensing performance, good composite, and simplified process

Active Publication Date: 2021-02-05
滕州创感电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, although there are many academic papers and patents claiming to achieve gas sensing at room temperature, but only at the level of sensing materials, once it is mixed with slurry and made into a de

Method used

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  • Preparation method of room-temperature semiconductor gas sensing material and sensor
  • Preparation method of room-temperature semiconductor gas sensing material and sensor
  • Preparation method of room-temperature semiconductor gas sensing material and sensor

Examples

Experimental program
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Embodiment 1

[0029]A room temperature semiconductor gas sensor and a preparation method thereof. The preparation method includes the following steps:

[0030](1) Preparation of unit oxide nanomaterial precursor liquid. Unit oxide nanomaterials refer to oxide nanomaterials containing a metal element. The preparation process of the precursor liquid is as follows:

[0031]ZnO precursor liquid. Add 4.0g of ZnCl2In 5ml water, make solution 1; add 5.5g of Na2CO3To 35 ml of water, configure into solution 2; while stirring, slowly add solution 1 to solution 2 to form a ZnO precursor liquid.

[0032]F doped SnO2(SnO2:F) Precursor liquid. Weigh 9.5g of SnCl2• 2H2O, 0.04g of NaF, dissolved in 200ml of deionized water to prepare solution 1; measure 15ml of ammonia, add 120ml of deionized water to dilute to prepare solution 2; while stirring, slowly add solution 2 to solution 1 To form SnO2:F precursor liquid.

[0033]TiO2Precursor liquid. Measure 6.5ml of tetra-n-butyl titanate and dissolve it in 60ml of deionized wate...

Embodiment 2

[0045]A room temperature semiconductor gas sensor and a preparation method thereof. The preparation method includes the following steps:

[0046](1) Preparation of unit oxide nanomaterial precursor liquid.

[0047]ZnO precursor liquid. Add 4.6g of ZnCl2To 5ml water, make solution 1; add 6.1g of Na2CO3To 35 ml of water, configure into solution 2; while stirring, slowly add solution 1 to solution 2 to form a ZnO precursor liquid.

[0048]F doped SnO2Precursor liquid. Weigh 10.0g of SnCl2• 2H2O, 0.045g of NaF, dissolved in 200ml of deionized water to prepare solution 1; Measure 20ml of ammonia, add 120ml of deionized water to dilute to prepare solution 2; while stirring, slowly add solution 2 to solution 1 , The formation of F-doped SnO2Precursor liquid.

[0049]TiO2Precursor liquid. Measure 6ml of tetra-n-butyl titanate and dissolve it in 60ml of deionized water; transfer the above solution to a 100ml reactor and put it in a drying oven at 120°C for 5h for hydrothermal reaction; after the reactio...

Embodiment 3

[0057]A room temperature semiconductor gas sensor and a preparation method thereof. The preparation method includes the following steps:

[0058](1) Precursor liquid preparation of unit oxide nanomaterials, the preparation process is as follows:

[0059]ZnO precursor liquid. Add 5.0g of ZnCl2In 5ml water, make solution 1; add 6.5g of Na2CO3To 35 ml of water, configure into solution 2; while stirring, slowly add solution 1 to solution 2 to form a ZnO precursor liquid.

[0060]F doped SnO2(SnO2:F) Precursor liquid. Weigh 10.5g of SnCl2• 2H2O, 0.05g of NaF, dissolved in 200ml of deionized water to prepare solution 1; measure 25ml of ammonia, add 120ml of deionized water to dilute to prepare solution 2; while stirring, slowly add solution 2 to solution 1 To form SnO2:F precursor liquid.

[0061]TiO2Precursor liquid. Measure 5.5ml of tetra-n-butyl titanate and dissolve it in 60ml of deionized water; transfer the above solution to a 100ml reactor and put it in a drying oven at 120°C for 5h for hydrot...

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Abstract

The invention discloses a preparation method of a room-temperature semiconductor gas sensing material and a sensor, the gas sensor material is a ZnO-SnO2: F-TiO2-CuO/graphene composite nano material,and the gas sensor material is used as a sensing material to prepare a room-temperature gas sensor. The preparation method comprises the following steps: preparing unit oxide nano material precursor liquid, preparing multi-component oxide nano material precursor liquid, synthesizing a multi-component oxide nano material, preparing a multi-component oxide/graphene composite nano material, and manufacturing the room-temperature gas sensor. The preparation technology and process are successive and organically unified, and the prepared room-temperature gas sensor can realize effective room-temperature sensing of hydrogen sulfide, ethanol, methane and other gases and is applied to intelligent and wearable sensing products.

Description

Technical field[0001]The invention relates to the field of gas sensing, in particular to a room temperature gas sensor and a preparation method thereof.Background technique[0002]With the development of industry and society, the problem of gas pollution has become increasingly severe. How to realize real-time gas monitoring has become an important and urgent topic. Gas sensors can be divided into three categories according to the reaction type: semiconductor gas sensors, contact combustion gas sensors and electrochemical gas sensors. Among them, semiconductor gas sensors have many advantages such as low cost, high accuracy, strong sensitivity, portable wearable, simple operation, etc., and play a major role in industrial production, home life, environmental protection, drunk driving detection, safety detection and other fields. Demand is currently the most widely used type of gas sensor.[0003]So far, the core material of semiconductor gas sensors is still metal oxide semiconductor, a...

Claims

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Application Information

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IPC IPC(8): G01N27/00C01G23/053C01G19/02C01G9/02C01G3/02C01B32/194B82Y30/00
CPCG01N27/00C01G23/053C01G19/02C01G9/02C01G3/02C01B32/194B82Y30/00C01P2004/80
Inventor 马建孙会李福男刁丽娜满文佳马忻忻
Owner 滕州创感电子科技有限公司
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