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Filling method of deep-hole aluminum in oxide layer

A filling method and oxide layer technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of increasing the thermal aluminum diffusion performance, affecting the electrical performance of the device, affecting the contact resistance, etc., and achieving small electrical performance and contact resistivity. low, fluidity-enhancing effect

Pending Publication Date: 2021-02-19
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the increase in temperature will increase the diffusion performance of thermal aluminum, which will easily diffuse into other layers. In order to prevent its diffusion, the thickness of TiN must be increased, and increasing the thickness of TiN will affect the contact resistance and the electrical properties of the device.

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  • Filling method of deep-hole aluminum in oxide layer
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  • Filling method of deep-hole aluminum in oxide layer

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Embodiment Construction

[0034] The present invention will be described in more detail below with reference to the accompanying drawings. Although preferred embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0035] image 3 The technical roadmap of deep hole filling in the prior art is shown. like image 3 As shown, the preparation route of the emitter in the prior art IGBT can be divided into the following four steps: Step 1: Deposit metal titanium with a thickness of about 600A as an adhesion layer; Step 2: Deposit titanium nitride with a thickness of about 1000A as The barrier layer prevents the diffusion of hot aluminum; step 3: deposit cold aluminum with a thickness of about 1000A...

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Abstract

The invention discloses a method for filling deep-hole aluminum in an oxide layer, which comprises the following steps of: depositing metallic titanium and titanium nitride on the upper surface of theoxide layer, the hole wall of a deep hole and the bottom of the deep hole to form an adhesive layer; depositing metal tungsten on the adhesion layer to form a barrier layer; depositing metal aluminumon the barrier layer to form an aluminum film; and depositing metal aluminum on the aluminum film at a preset temperature until the deep hole is completely filled. The metal tungsten is deposited onthe adhesion layer to serve as the barrier layer, the hindering effect on hot aluminum diffusion can be improved under the condition that the thickness is relatively small, meanwhile, the resistivityof the metal tungsten is lower than that of titanium nitride, and the influence on the electrical property of aluminum is small.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for filling deep-hole aluminum in an oxide layer. Background technique [0002] Power device is one of the most important components in the semiconductor industry. It is the basic technology for energy saving and emission reduction, and the core device for power control. It has the characteristics of high withstand voltage, high current and parallel application. Insulated gate bipolar transistor (IGBT) is a representative product of the third technical revolution of power semiconductor devices. figure 1 A schematic diagram of the structure of an insulated gate bipolar transistor in the prior art is shown, and the cell structure of the IGBT is as follows figure 1 As shown, it is a composite structure of a metal-oxide-semiconductor field effect transistor (MOSFET) and a bipolar transistor, which is a voltage-controlled power switching device. The switc...

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Application Information

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IPC IPC(8): H01L21/28H01L29/417
CPCH01L29/401H01L29/41708
Inventor 韩为鹏邓斌
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD