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Flash memory unit and preparation method thereof

A flash memory unit, electronic technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of high crystallization temperature of polysilicon semiconductors, reduce the crystallization temperature of polysilicon, etc., and achieve low processing temperature and good performance.

Pending Publication Date: 2021-03-02
SHANDONG SINOCHIP SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the high crystallization temperature of traditional polysilicon semiconductors, it can only be used on silicon substrates with high temperature resistance, while the backplane of flexible display screens is plastic with a low melting point, so lower the crystallization temperature of polysilicon, or find a high-performance Semiconductor materials to replace polysilicon become an effective means to solve this bottleneck

Method used

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  • Flash memory unit and preparation method thereof
  • Flash memory unit and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0025] Embodiment 1 Preparation of flash memory unit

[0026] A method for manufacturing a flash memory unit, comprising the steps of:

[0027] (1) Use a P-type heavily doped silicon substrate of ~500 microns as the gate, and grow a layer of thermally oxidized SiO with a thickness of 5 nm on it 2 As a silicon oxide isolation layer;

[0028] (2) On the silicon oxide isolation layer, a layer of silicon nitride with a thickness of 7nm is deposited as an electron potential well layer by using low-pressure chemical vapor phase;

[0029] (3) Deposit a layer of aluminum oxide with a thickness of 5nm on the electron potential well layer by thermal ALD as the tunneling layer;

[0030] (4) Use ALD to deposit a layer of gallium indium zinc oxide with a thickness of 15nm as the channel layer;

[0031] (5) In order to realize multiple separate flash memory cells in the entire channel layer, use positive photoresist (PPR) to etch away the redundant IGZO part;

[0032] (6) Etch at both e...

Embodiment 2

[0034] Embodiment 2 Erasing and writing characteristics of flash memory unit

[0035] The flash memory cell obtained in Example 1 was written and erased by applying a pulse voltage of ±18V with a duration of 10ms to the gate to obtain an Id-Vg curve of the flash memory cell.

[0036] In the writing process, a positive pulse voltage is applied to the gate, and the electrons affected by the voltage are transported by the Si through the tunnel oxide layer. 3 N 4 Charge trapping layer (CTL) trapping. When the channel is turned on, these electrons in the CTL create a positive charge in the channel, canceling some of the electrons in the channel, resulting in a threshold voltage (V th ) positive offset; during the erasing operation, the gate is connected to the negative pulse voltage and the negative pulse voltage, and the trapped electrons return to the channel to complete the erasing process. When the channel is opened, the captured charges in the offset channel in the CTL layer...

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Abstract

The invention provides a flash memory unit, which comprises a grid electrode, a silicon oxide isolation layer covering the grid electrode, an electron potential well layer covering the silicon oxide isolation layer and a tunneling layer covering the electron potential well layer, wherein a channel is formed in the tunneling layer, a source electrode and a drain electrode are arranged at the two ends of the channel respectively, the source electrode and the drain electrode partially cover the ends of the channel, the channel is a gallium indium zinc oxide channel, the electron potential well layer is a silicon nitride electron potential well layer, and the tunneling layer is a silicon oxide tunneling layer. According to the flash memory unit, an amorphous gallium indium zinc oxide (IGZO) semiconductor serves as the channel, silicon nitride and silicon oxide serve as flash memory units of an electron trap layer and an electron tunneling layer, IGZO is deposited through ALD, and a large storage window is obtained. The flash memory units are low in processing temperature and good in performance, the problem that a silicon channel flash memory unit cannot be used for a flexible substrate material is solved, and a development direction is provided for a future flexible memory.

Description

technical field [0001] The invention belongs to the technical field of memory manufacturing, in particular to a flash memory unit with IGZO as a channel and silicon oxide as a tunneling layer and its application. Background technique [0002] Flash memory has been widely used as the best choice for non-volatile memory applications due to its advantages of high density, low price, and electrical programmability and erasability. With the demand for high-capacity and small-size memory, the number of chips on each silicon wafer will increase day by day. At the same time, in order to fully utilize each flash memory unit and save costs, MLC (Multi-Level Cell) and QLC (Trinary-Level Cell) have been widely used on the basis of SLC (Single-Level Cell). These flash memories control different write bits by controlling the number of electrons in the storage gate. During the writing process, by applying a positive pulse voltage to the control gate, the electrons in the channel pass thro...

Claims

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Application Information

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IPC IPC(8): H01L29/24H01L29/423H01L29/792H01L21/34H01L21/44
CPCH01L29/792H01L29/66969H01L29/24H01L29/401H01L29/4234
Inventor 王萱孙中琳刘尚刘大铕
Owner SHANDONG SINOCHIP SEMICON