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Aluminum antimonide polycrystalline material synthesizing process device and synthesis method

A technology for synthesizing aluminum antimonide and polycrystalline materials, which is applied in the growth of polycrystalline materials, chemical instruments and methods, single crystal growth, etc., can solve the problems of complex structure, difficult control, high cost, etc., and achieve a positively small cavity , the effect of suppressing the loss of elements

Active Publication Date: 2021-03-09
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the smelting process of this method, the cavity of the furnace body is large, and the vapor pressure of antimony is much greater than that of aluminum, which will cause the loss of antimony content. In order to obtain single-phase aluminum antimonide, a certain amount of antimony must be strictly compensated. In this method Only when the antimony content is compensated to 3%, can the single-phase aluminum antimonide be obtained, too little or too much compensation will lead to the second phase of aluminum or antimony in the aluminum antimony, which is difficult to control
Moreover, the vacuum electric arc furnace that can reach high vacuum and high temperature has complex structure and high cost, and this method is not suitable for high-purity semiconductor synthesis

Method used

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  • Aluminum antimonide polycrystalline material synthesizing process device and synthesis method

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Experimental program
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Effect test

Embodiment 1

[0035]Embodiment 1: Step 1, silicon nitride ceramic crucible and graphite gasket treatment. Soak a silicon nitride ceramic crucible with a wall thickness of 5 mm in aqua regia for 24 hours, take it out, rinse it with deionized water, then soak it with 10% hydrofluoric acid solution for 30 minutes, rinse it with deionized water, and then ultrasonicate it in deionized water Take it out for 2 hours, rinse it with deionized water, put it into a vacuum drying oven at 120 degrees Celsius and dry it for 2 hours for later use. Soak a graphite gasket with a thickness of 2 mm in aqua regia for 24 hours, take it out and rinse it, and then ultrasonicate it in deionized water for 2 hours.

[0036] Step two, weighing and loading. In a 100-class clean room, use an electronic level to weigh a certain mass of high-purity aluminum with a purity of 99.999% and high-purity antimony with a purity of 99.9999% at a molar ratio of 1:1, and the precision of the electronic balance is not less than 10 ...

Embodiment 2

[0040] Embodiment 2: Step 1, silicon nitride ceramic crucible and graphite gasket treatment. Soak a silicon nitride ceramic crucible with a wall thickness of 5 mm in aqua regia for 24 hours, take it out, rinse it with deionized water, then soak it with 10% hydrofluoric acid solution for 45 minutes, rinse it with deionized water, and then ultrasonicate it in deionized water After 3 hours, take it out, rinse it with deionized water, put it into a vacuum drying oven at 120 degrees Celsius and dry it for 4 hours for later use. Soak a graphite gasket with a thickness of 2 mm in aqua regia for 24 hours, take it out and rinse it, and then ultrasonicate it in deionized water for 3 hours.

[0041] Step two, weighing and loading. In a 100-class clean room, use an electronic level to weigh a certain mass of high-purity aluminum with a purity of 99.999% and high-purity antimony with a purity of 99.9999% at a molar ratio of 1:1, and the precision of the electronic balance is not less than...

Embodiment 3

[0044] Embodiment 3: Step 1, silicon nitride ceramic crucible and graphite gasket treatment. Soak a silicon nitride ceramic crucible with a wall thickness of 5 mm in aqua regia for 24 hours, take it out, rinse it with deionized water, then soak it with 15% hydrofluoric acid solution for 45 minutes, rinse it with deionized water, and then ultrasonicate it in deionized water After 3 hours, take it out, rinse it with deionized water, put it into a vacuum drying oven at 120 degrees Celsius and dry it for 4 hours for later use. Soak a graphite gasket with a thickness of 2 mm in aqua regia for 24 hours, take it out and rinse it, and then ultrasonicate it in deionized water for 3 hours.

[0045] Step two, weighing and loading. In a 100-class clean room, use an electronic level to weigh a certain mass of high-purity aluminum with a purity of 99.999% and high-purity antimony with a purity of 99.9999% at a molar ratio of 1:1, and the precision of the electronic balance is not less than...

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Abstract

The invention relates to an aluminum antimonide polycrystalline material synthesizing process device and a synthesis method. High-purity antimony and high-purity aluminum are put into a silicon nitride ceramic crucible, a graphite gasket is covered and nested in a quartz crucible, an air gap exists between the graphite gasket and the upper surface of the silicon nitride ceramic crucible, and highvacuum in the silicon nitride ceramic crucible is not influenced during vacuumizing; after vacuumizing, a quartz plug and the quartz crucible are welded, and finally the quartz plug and the quartz crucible are synthesized in an inclinable rotating tubular furnace in a rotating mode, so that synthesis of single-phase aluminum antimonide in a small-cavity crucible without additional compensation isachieved, and elements are not lost in the synthesis process. According to the process device, the silicon nitride ceramic crucible does not react with an aluminum antimonide melt at high temperature,antimony evaporation is inhibited, the effect of cracking of the reaction that the outer quartz crucible adsorbs the aluminum element is prevented, it is guaranteed that melt components are not lostin the synthesis process, and the graphite gasket has the effect of adsorbing residual oxygen at high temperature. The synthesized aluminum antimonide polycrystalline material has the characteristic of uniform single-phase components.

Description

technical field [0001] The invention belongs to the field of semiconductor material preparation, and relates to a device and a synthesis method for synthesizing aluminum antimonide polycrystalline material technology. Background technique [0002] Aluminum antimonide (AlSb) is an intermetallic compound composed of group III elements Al and V group elements Sb of the periodic table of elements. It has unique physical properties such as large atomic number, suitable band gap, and high carrier mobility. , has important application prospects in radiation detection, solar cells, high temperature resistant semiconductor devices, and lithium ion battery anode materials. At the same time, since Al element is the most abundant metal element (8.1%) in the earth's crust, and Sb element is also an element with abundant reserves, under the current resource shortage situation, the large-scale preparation of aluminum antimonide semiconductor has the advantage of low cost. [0003] In the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B28/06
CPCC30B29/40C30B28/06
Inventor 殷子昂张香港刘珂静王涛
Owner NORTHWESTERN POLYTECHNICAL UNIV
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