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Nano-silver soldering paste, preparation method thereof and application of nano-silver soldering paste in chip packaging interconnection structure

A nano-silver, solder paste technology, applied in welding equipment, welding media, manufacturing tools, etc., can solve the problems of low shear strength and poor compactness, achieve high shear strength, good bonding, and is conducive to large-scale production. The effect of industrial application

Inactive Publication Date: 2021-03-12
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the deficiencies in the prior art, the present invention provides a nano-silver solder paste and its preparation method and application to solve the problem of low shear strength and poor compactness of the existing nano-silver solder paste after sintering to form a connection layer. question

Method used

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  • Nano-silver soldering paste, preparation method thereof and application of nano-silver soldering paste in chip packaging interconnection structure
  • Nano-silver soldering paste, preparation method thereof and application of nano-silver soldering paste in chip packaging interconnection structure
  • Nano-silver soldering paste, preparation method thereof and application of nano-silver soldering paste in chip packaging interconnection structure

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preparation example Construction

[0042] The embodiment of the present invention also provides the preparation method of the nano-silver solder paste as described above, which includes: providing the flaky nano-silver and the organic solvent carrier, stirring the flaky nano-silver and the organic solvent carrier mixing to prepare the nano-silver solder paste.

[0043] In a preferred scheme, the sheet-shaped nano silver is prepared by a liquid phase reduction method. Specifically include the following steps:

[0044] S10, dissolving the reducing agent in the solvent to obtain a first reaction liquid. Wherein, the reducing agent is selected from any one of ascorbic acid, hydrazine hydrate, citrate, polyvinylpyrrolidone, sodium sulfite and sodium borohydride; the solvent is selected from ethanol, ethylene glycol, water, N,N-di Any one of methylformamide, N,N-dimethylacetamide and N-methylpyrrolidone.

[0045]S20, adding the silver source precursor to the first reaction solution, stirring and mixing to form a s...

Embodiment 1

[0054] Dissolve 0.888g of polyvinylpyrrolidone into 200ml of N,N-dimethylformamide, stir and dissolve completely, then add 1.689g of silver nitrate, stir and mix to form a reaction solution. The reaction solution was placed in a reaction kettle, and the reaction time was 4 hours at a temperature of 180°C. After the reaction is finished, it is washed with deionized water, then with ethanol, and finally freeze-dried to prepare and obtain flake nano-silver.

[0055] image 3 It is the SEM figure of the flake nano-silver prepared by the present embodiment, as image 3 As shown, the flaky nano-silver prepared in this embodiment includes triangular flaky nano-silver and hexagonal flaky nano-silver, and the hexagonal flaky nano-silver is relatively more. The particle size range of the flaky nano-silver prepared in this embodiment is 100nm-300nm, and the thickness is 20nm-50nm.

[0056] The prepared flaky nano-silver was mixed with a mixed organic solvent carrier of ethylene glycol...

Embodiment 2

[0066] Dissolve 1.65g of polyvinylpyrrolidone into 200ml of N,N-dimethylacetamide, stir and dissolve completely, add 1.689g of silver nitrate, and stir to form a reaction solution. The reaction solution was placed in a reaction kettle, and the reaction time was 4 hours at a temperature of 180°C. After the reaction is finished, it is washed with deionized water, then with ethanol, and finally freeze-dried to prepare and obtain flake nano-silver.

[0067] Figure 7 It is the SEM figure of the flake nano-silver prepared by the present embodiment, as Figure 7 As shown, the flaky nano-silver prepared in this embodiment includes triangular flaky nano-silver and hexagonal flaky nano-silver, and the triangular flaky nano-silver is relatively more. The particle size range of the flake nano-silver prepared in this embodiment is 100nm-600nm, and the thickness is 20nm-50nm.

[0068] The prepared flaky nano-silver was mixed with a mixed organic solvent carrier of ethylene glycol and β-...

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Abstract

The invention provides nano-silver soldering paste and a preparation method thereof. The nano-silver soldering paste comprises flaky nano-silver and an organic solvent carrier which are mixed with each other, wherein the organic solvent carrier is a mixture of any two or more of ethylene glycol, glycerol, diethylene glycol, triethylene glycol, beta terpineol, gamma terpineol and delta terpineol; and the volume percentage of any organic solvent is not less than 20%. The preparation method of the nano-silver soldering paste comprises the following steps of: providing the flaky nano-silver and the organic solvent carrier, and stirring and mixing the flaky nano-silver and the organic solvent carrier to prepare the nano-silver soldering paste. The invention further provides an application of the nano-silver soldering paste in a chip packaging interconnection structure. The nano-silver soldering paste has a low-temperature sintering performance and can be well applied to the field of electronic packaging of low-temperature welding and high-temperature service. A connecting layer formed by sintering the soldering paste is high in shear strength, good in bonding degree of a connecting interface and uniform and compact.

Description

technical field [0001] The invention belongs to the technical field of packaging of high-power electronic devices, and in particular relates to a nano-silver solder paste and a preparation method thereof, and also relates to the application of the aforementioned nano-silver solder paste in a chip packaging interconnection structure. Background technique [0002] The working environment required in fields such as autonomous driving, aerospace, high-speed railway, and oil and gas exploration is getting worse and worse, and the corresponding requirements for chips are getting higher and higher. Traditional silicon-based chips can no longer meet the needs of specific environments in these fields. To this end, researchers turned to wide-gap semiconductors (such as SiC and GaN), which can well meet people's needs for high-performance chips at this stage. [0003] Wide-gap semiconductors (such as SiC and GaN) have very broad application prospects in high-power electrical appliance...

Claims

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Application Information

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IPC IPC(8): B23K35/24B23K35/40B23K35/362
CPCB23K35/24B23K35/362B23K35/40
Inventor 朱朋莉王春成李刚孙蓉张黛琳
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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