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Soldering paste and application thereof

A technology of solder paste and nano-silver, which is applied in the field of device welding, can solve the problems of high sintering temperature and low shear strength, and achieve high shear strength, good bonding, and easy-to-achieve process conditions

Active Publication Date: 2021-04-16
SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the deficiencies in the prior art, the present invention provides a solder paste and its preparation method and application, combined with flake nanoparticles as filling and metal-organic (MO) addition to achieve sintering aid, to solve the existing The problem of high sintering temperature and low shear strength of nano-silver or copper solder paste

Method used

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  • Soldering paste and application thereof
  • Soldering paste and application thereof
  • Soldering paste and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The flake nano-silver, copper organic source and ethylene glycol were mixed according to a mass ratio of 6:2:1, and stirred and mixed in a mixer for 30 minutes to prepare a solder paste.

[0038] Wherein, the copper organic source is prepared according to the molar ratio of copper hydroxide and ethylenediamine of 1:4 under electromagnetic stirring at room temperature for 30 minutes.

[0039] The solder paste prepared above is applied to the packaging and interconnection structure of the electronic device. Specifically, as attached figure 1 As shown, both the first mother chip 10 and the second mother chip 20 in the package interconnection structure are selected as DBC substrates.

[0040] First, the mother sheets are processed: the DBC substrates (the first mother sheet and the second mother sheet) are ultrasonically washed in ethanol for 3 minutes to remove impurities on the surface, and then dried.

[0041] Next, the solder paste prepared in this embodiment is evenly ...

Embodiment 2

[0046] The flake nano-silver, silver organic source and β-terpineol were mixed according to a mass ratio of 10:4:1, and stirred and mixed in a mixer for 30 minutes to prepare a solder paste.

[0047] The silver organic source is prepared by silver acetate and 2-amino-2-methyl-1-propanol at a molar ratio of 1:4 under electromagnetic stirring at room temperature for 30 minutes.

[0048] The solder paste prepared above is applied to the packaging and interconnection of electronic devices. Specifically, as attached figure 1 As shown, both the first mother chip and the second mother chip in the package interconnection structure are selected as DBC substrates.

[0049] First, the mother sheets are processed: the DBC substrates (the first mother sheet and the second mother sheet) are ultrasonically washed in ethanol for 3 minutes to remove impurities on the surface, and then dried.

[0050] Next, the solder paste prepared in this embodiment is evenly coated on the connection surfac...

Embodiment 3

[0055] Flake nano-silver, copper-silver mixed organic source and organic solvent (ethylene glycol+α-terpineol) were mixed according to the mass ratio of 5:1:1, and stirred and mixed in a mixer for 30min to prepare solder paste.

[0056] The organic source of silver is the product of silver acetate and 2-amino-2-methyl-1-propanol in a molar ratio of 1:4 under electromagnetic stirring at room temperature for 30 minutes. The copper organic source is the product of copper formate and 2-amino-2-methyl-1-propanol molar ratio of 1:4 under electromagnetic stirring at room temperature for 30 minutes. The mixed organic source of copper and silver is formed by mixing the organic source of silver and the organic source of copper according to the mass ratio of 1:1.

[0057] The solder paste prepared above is applied to the packaging and interconnection of electronic devices. Specifically, as attached figure 1 As shown, both the first mother chip and the second mother chip in the package...

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Abstract

The invention relates to the technical field of device welding, and particularly discloses soldering paste. The soldering paste comprises flaky nano-silver, a metal organic source and an organic solvent carrier. The invention further discloses application of the soldering paste in an electronic device packaging interconnection structure, the electronic device packaging interconnection structure comprises a first master slice, a second master slice and a connecting layer which is used for connecting the first master slice and the second master slice, the connecting layer is formed by sintering the soldering paste through a sintering process of heating and applying pressure, and in the sintering process, the heating temperature ranges from 130 DE C to 300 DE C, and the pressure applying pressure ranges from 1 MPa to 20 MPa. The soldering paste can be well applied to the field of electronic packaging of low-temperature welding and high-temperature service, the bonding degree of a connecting interface of the connecting layer formed by sintering the solder paste is good, uniform and compact, the shear strength at 150 DE C can reach 51 MPa or above, and the soldering paste has very high shear strength and can be well applied to packaging and interconnection of electronic devices.

Description

technical field [0001] The invention relates to the technical field of device welding, in particular to a solder paste and its application in packaging and interconnection structures of electronic devices. Background technique [0002] With the development of autonomous driving, aerospace, high-speed rail and oil and gas exploration, etc., the working environment required is getting worse and worse. Correspondingly, the requirements for chips are getting higher and higher. Traditional silicon-based chips can no longer meet their needs. Therefore, there is an urgent need for a new type of chip that can withstand high temperature, high breakdown voltage, and can adapt to high current density and high switching frequency. Therefore, most researchers now turn their attention to wide-gap semiconductors (such as SiC and GaN), which can well meet people's needs for high-performance chips at this stage. However, the above-mentioned high temperature, high current, density and othe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K35/362B23K35/40
Inventor 朱朋莉王春成李刚
Owner SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS
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