Deplating solution for outer lead electroplated layer of integrated circuit and preparation method of deplating solution
A technology for integrated circuits and outer leads, which is applied in the field of deplating solution and its preparation for the electroplating layer of the outer leads of integrated circuits. The effect of plating efficiency and corrosion inhibition
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Embodiment 1
[0045] Embodiment 1 provides a kind of deplating solution of the electroplating layer of the outer lead wire of an integrated circuit, and raw material comprises following concentration: citric acid 175g / L, sulfuric acid 175g / L, sodium lauryl sulfate 25g / L, hydrogen peroxide 225g / L , poly(dehydrated malic anhydride-methyl acrylate) 70g / L, auxiliary agent (sodium chloride and ammonium citrate, weight ratio is 3:2) 40g / L, amine organic matter (diethanolamine and n-hexylamine, weight ratio 4:1) 175g / L.
[0046] In this example, poly(dehydrated malic anhydride-methyl acrylate) is self-made, and the steps include the following steps: (1) The temperature of the reaction vessel is raised to 60° C., 75 g of dehydrated malic anhydride is added and nitrogen protection is introduced, and preheated for 15 minutes; (2) 35g methyl acrylate was added to the reaction vessel, and continued stirring for 25 minutes, and 2g of n-dodecyl mercaptan was added; (3) the temperature was raised to 80-90...
Embodiment 2
[0051] The specific implementation of the present embodiment is the same as that of Example 1, except that the dehydrated malic anhydride is 80 g, methyl acrylate is 30 g, and ammonium persulfate is 1 g.
[0052] The deplating solution prepared in this embodiment is denoted as T2.
Embodiment 3
[0054] The specific implementation of this embodiment is the same as that of Example 1, except that the weight ratio of sodium chloride and ammonium citrate is 4:1.
[0055] The deplating solution prepared in this embodiment is denoted as T3.
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