Preparation method of vanadium diselenide nanosheet spontaneously separated from growth substrate

Abstract

The invention discloses a preparation method of a vanadium diselenide nanosheet spontaneously separated from a growth substrate, which comprises the following steps: inversely buckling a silicon substrate on a quartz boat filled with vanadium trichloride powder, putting the quartz boat in the center of a tube furnace, keeping the height of 1-5mm from the silicon substrate to the vanadium trichloride, putting selenium powder at the upstream of the tube furnace according to the mass ratio of the selenium powder to the vanadium trichloride being (10-20):1, then heating the tubular furnace to 500-850 DEG C, conducting heat preservation for 15-45 min, and then conducting natural cooling. In the reaction process, inert gas with the flow rate of 50-150 sccm is used as carrier gas. According to the silicon substrate-based inverted buckle type chemical vapor deposition growth method, the obtained high-crystallization-quality vanadium diselenide nanosheet can be spontaneously separated from thesilicon substrate, sample transfer is facilitated, and the defects that a sample prepared through traditional chemical vapor deposition is difficult to transfer, and the sample and the environment areprone to being polluted in the transfer process are overcome. The vanadium diselenide nano material prepared by the method can be applied to advanced energy devices, such as electrode materials of flexible supercapacitors and the like.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a method for preparing vanadium diselenide nanosheets that are spontaneously separated from a growth substrate. Background technique [0002] Transition metal sulfides (MX 2 , M=transition metal; X=S, Se, Te) is an important graphene-like two-dimensional layered material. Transition metal atoms of different subgroups and different chalcogen atoms combine to form a structure with similar structure and different properties. A large family of transition metal chalcogenides. Among them, the chalcogenides of the sixth subgroup metals (Mo, W) are usually semiconductors, which can make up for the shortage of semi-metallic graphene with zero band gap in the application of electronic devices. Its direct band gap in the visible light range, strong light-matter interaction and excellent flexibility make it have a broad application background in flexible electr...

AI Technical Summary

Problems solved by technology

[0004] Using the traditional method of chemical vapor deposition growth plus chemical wet etching to realize the growth and transfer of vanadium diselenide is not only time-consuming, but also pollutes the environment and samples

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