Porous high-entropy alloy oxide film and preparation method thereof

A technology of oxide film and high-entropy alloy, which is applied in the field of high-entropy alloy, can solve the problems of low hardness and easy change of pores, and achieve the effect of high hardness, high production efficiency and uniform pores

Active Publication Date: 2021-03-26
JIANGSU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the defects and deficiencies of the porous metal materials in the prior art, such as low hardness, easy to be corroded, and easy to change pores, the purpose of the present invention is to provide a porous high-entropy alloy oxide film and its preparation method. Co-sputtering technology deposits high-entropy alloy films with different Al contents on the substrate, removes the active component Al by dealloying the film, and finally performs sealing heat treatment to obtain porous high-entropy alloy films

Method used

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  • Porous high-entropy alloy oxide film and preparation method thereof
  • Porous high-entropy alloy oxide film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0033] (1) Substrate preparation: Place the Si substrate polished on one side in acetone, ethanol and deionized water for ultrasonic cleaning in sequence, the time is 30min, and the ultrasonic frequency is 100Hz;

[0034] (2) Lofting: Then fix the substrate cleaned in step (1) on the baffle, put it into the sample delivery room of the radio frequency magnetron sputtering equipment for vacuuming, and the vacuum degree is higher than 5×10 -3 Torr, then turn off the chamber vacuum pump;

[0035] (3) Pre-sputtering: the CoCrFeMnNi target and the Al target are respectively pre-sputtered to remove oxides and dirt on the target surface. The purity of the CoCrFeMnNi and Al targets is 99.99%; the cavity is vacuum during pre-sputtering degrees higher than 2×10 -7 Torr, the voltage is 50V, the flow rate of high-purity argon gas is 20sccm, the working pressure is 3mTorr, the sputtering time is 30min, and the chamber temperature is cooled to 20°C after sputtering;

[0036] (4) Sample del...

Embodiment 2～5

[0049] The preparation method and test standard method of the porous high-entropy alloy oxide film of embodiments 2-5 are all the same as embodiment 1, the difference is that the time of sealing tube heat treatment is different, as shown in table 1:

[0050] Table 1

[0051] Group / Project Heat treatment time / s Hardness / GPa Corrosion potential / V Example 1 5 10.2 -0.689 Example 2 10 12.8 -0.506 Example 3 15 18.3 -0.306 Example 4 20 18.8 -0.310 Example 5 25 17.9 -0.315

[0052] figure 1 with figure 2 Respectively, the hardness and heat treatment time of the porous high-entropy alloy oxide film prepared in Examples 1 to 5 are the relationship diagrams between the corrosion potential and the heat treatment time. It can be seen that the heat treatment time of the porous high-entropy alloy oxide film prepared by the method of the present invention It has an important influence on the hardness of the film. As the heat trea...

Embodiment 6

[0054] (1) Substrate preparation: place the Si substrate polished on one side in acetone, ethanol and deionized water for ultrasonic cleaning in sequence, the time is 15min, and the ultrasonic frequency is 100Hz;

[0055] (2) Lofting: Then fix the substrate cleaned in step (1) on the baffle, put it into the sample delivery room of the radio frequency magnetron sputtering equipment for vacuuming, and the vacuum degree is higher than 5×10 -3 Torr, then turn off the chamber vacuum pump;

[0056] (3) Pre-sputtering: the CoCrFeMnNi target and the Al target are respectively pre-sputtered to remove oxides and dirt on the target surface. The purity of the CoCrFeMnNi and Al targets is 99.99%; the cavity is vacuum during pre-sputtering degrees higher than 2×10 -7 Torr, the voltage is 150V, the flow rate of high-purity argon gas is 40sccm, the working pressure is 5mTorr, the sputtering time is 20min, and the chamber temperature is cooled to 30°C after sputtering is completed;

[0057] ...

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Abstract

The invention belongs to the technical field of high-entropy alloys, and particularly relates to a porous high-entropy alloy oxide film and a preparation method thereof. The preparation method comprises the following steps of: co-sputtering a CoCrFeMnNi target material and an Al target material, then soaking in a dealloying solution for dealloying treatment to obtain a porous high-entropy alloy film, and finally performing heat treatment by using a sealing tube to obtain the porous high-entropy alloy oxide film on the surface. The prepared porous high-entropy alloy oxide film is uniform in pore, high in hardness and resistant to corrosion, the pore density can be adjusted by controlling an Al component, the preparation process is simple, large-area operation can be achieved, and the production efficiency is high.

Description

technical field [0001] The invention belongs to the technical field of high-entropy alloys, and in particular relates to a porous high-entropy alloy oxide film and a preparation method thereof. Background technique [0002] Porous metal material is a new type of engineering material with dual properties of function and structure. Porous metal material has quantum size effect, small size effect, surface effect and macroscopic quantum tunneling effect. The combination of performance, beyond the inherent function of the material, exerts a series of characteristics such as light weight, high strength and toughness, strong adsorption, heat insulation, heat dissipation, and excellent energy absorption performance of porous materials. It not only has the large specific surface area and biocompatibility of porous materials, but also retains the properties of ductility, weldability and electrical conductivity of metal materials, and is very suitable as a substrate material for sensor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/16C23C14/35C23C14/58
CPCC23C14/165C23C14/352C23C14/5873C23C14/5853C23C14/5806Y02E60/50
Inventor 王泽王云壮秦青丰毕伟孙志娟夏少华王成张扬杨林李小平雷卫宁叶霞
Owner JIANGSU UNIV OF TECH
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