Method for treating electrostatic chuck by using ALD process

Abstract

The invention discloses a method for treating an electrostatic chuck by using an ALD process. The method comprises the following steps that 1, the electrostatic chuck is placed in an atomic layer deposition reactor, first reaction gas is introduced for first chemical adsorption, so that the first reaction gas is adsorbed to the surface of the electrostatic chuck; 2, nitrogen flow is adopted for purging; 3, second reaction gas is introduced for second chemical adsorption; 4, nitrogen flow is adopted for purging; and step 5, steps 1-4 are repeated until the electrostatic chuck meets the requirements. According to the method, the ALD process is utilized to enhance the breakdown resistance near a hole of an original Echuck, effective insulation protection is carried out on the Echuck, and theeffects of stable operation, prolonged service life and reduced cost are achieved. According to the method, the arc discharge problem is effectively solved, particle and metal pollution is not introduced during the process, and the method is especially suitable for a high power and / or high temperature plasma etching environment with corrosive process gas.

Description

technical field [0001] The invention relates to an anti-corrosion technology of plasma equipment used in semiconductor etching technology, in particular to a method for improving the breakdown resistance performance of an electrostatic chuck by using ALD (atomic layer deposition, Atomic layer deposition) technology. Background technique [0002] Semiconductor etching technology is a semiconductor production process technology that uses plasma or plasma and corrosive gas to achieve selective etching. [0003] An electrostatic chuck (E-chuck or ESC for short) is a key component of a plasma processing device (eg, a plasma etching device). Since it is often used as the lower electrode and the substrate carrier, the electrostatic chuck should have some basic material properties and functions, such as sufficient hardness to cope with the friction and wear generated during the adsorption and desorption movement of the substrate in the vertical direction, High resistivity to mainta...

AI Technical Summary

Problems solved by technology

Although the existing electrostatic chuck considers the surface to be provided with a corrosion-resistant coating for plasma, such as Al 2 o 3 Ceramic layers, but when used in high RF power, high density plasma reactors, at pin holes and Helium holes, Al 2 o 3 The ceramic layer is easily broken down to cause arcing, and undesired arcing and glow discharge failures of the cooling gas occur, which greatly reduces the service life of the electrostatic chuck (E-chuck).

Images