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Method for generating anti-corrosion coating on inner wall of gas transmission pipeline by adopting ALD technology

An anti-corrosion coating, gas pipeline technology, applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of reducing production efficiency, corroding gas pipelines, uniform film formation, etc. The effect of mass production, uniform film thickness and dense coating

Pending Publication Date: 2021-03-26
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When various corrosive gases flow through metal pipes, they will corrode the gas line, causing metal and particle contamination, and contaminating the wafer
Especially in the plasma etching process, after the gas line connected to the reaction chamber is corroded, the gas line needs to be replaced, which will increase the cost and reduce the production efficiency, while the traditional coating It is difficult for the technology to uniformly form a film on the inner wall surface of the pipe

Method used

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  • Method for generating anti-corrosion coating on inner wall of gas transmission pipeline by adopting ALD technology
  • Method for generating anti-corrosion coating on inner wall of gas transmission pipeline by adopting ALD technology
  • Method for generating anti-corrosion coating on inner wall of gas transmission pipeline by adopting ALD technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Such as figure 1 As shown, it is an existing plasma etching equipment, which includes: a reaction chamber 1, a gas shower head 3, a gas through hole 2 for introducing a possibly corrosive reaction gas, and a plurality of gas pipelines 4. Air source 5 and multiple electronic switch valves 6. The gas source 5 feeds corrosive reaction gas into the reaction chamber 1 through the gas pipeline 4 .

[0033] Before the plasma etching equipment is assembled, the gas pipeline 4 is placed in the reaction chamber of the atomic layer deposition reactor, and an aluminum oxide film is deposited on the inner wall of the gas pipeline 4 as an anti-corrosion coating. The gas pipeline 4 has an inner diameter of 2-4mm and a length of 1m.

[0034] Using ultrapure water as the oxygen source, trimethylaluminum as the aluminum source, N 2 Flush gas. Specific steps are as follows:

[0035] Step 1, the gas pipeline 4 is placed in the reaction chamber of the atomic layer deposition reactor, a...

Embodiment 2

[0043] Such as figure 2As mentioned above, it is an existing gas pipeline 7 made of metal, which includes two air inlets 8 and a gas outlet 9 . The gas pipeline 7 is used in conjunction with plasma etching equipment. The plasma etching equipment includes a reaction chamber (chamber) and a gas shower head. The gas pipeline 7 introduces the reaction gas used for plasma etching into the reaction chamber through the gas shower head, and then applies radio frequency to the reaction chamber. The power is applied to the reactive gas to generate plasma, and the plasma treatment process is performed on the semiconductor workpiece to be processed placed in the reaction chamber.

[0044] Plasma etching equipment is used to etch semiconductor materials, usually chemical active substances containing chlorine, fluorine, etc. are used. These corrosive gases will corrode the gas pipeline 7 through the gas pipeline 7, thereby causing pollution. In this embodiment, an aluminum oxide film is...

Embodiment 3

[0053] SEM-EDS was used to observe the morphology and energy spectrum of the aluminum oxide film deposited on the inner wall of some metal gas pipeline samples. The gas pipeline samples are made of stainless steel. The instrument is a field emission scanning electron microscope (TESCAN MIRA), and an energy dispersive spectrometer (EDS) is used to analyze the type and content of the sample components.

[0054] Cross-section the gas pipeline along its long axis, the result is as follows Figure 3a As shown, the aluminum oxide film as an anti-corrosion coating has completely covered the inner wall of the pipe. Figure 3b to Figure 3e It is a micrograph of the inner wall of the pipeline under different magnifications. After the aluminum oxide film is formed by ALD technology, the inner wall of the pipeline is uniform in thickness and the coating is dense.

[0055] Such as Figure 4 As shown, the main components of the anti-corrosion coating on the inner wall of the gas pipeline...

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Abstract

The invention discloses a method for generating an anti-corrosion coating on the inner wall of a gas transmission pipeline by adopting an ALD technology. The gas transmission pipeline is a gas transmission pipeline of plasma etching equipment or MOCVD equipment. The method comprises the following steps: step 1, introducing first reaction gas into the gas transmission pipeline by adopting an atomiclayer deposition reactor, and carrying out first chemical adsorption, so that adsorbing the first reaction gas to the surface of the inner wall of the gas transmission pipeline; step 2, carrying outpurging by adopting inert gas flow so as to remove the first reaction gas which is not adsorbed by the gas transmission pipeline and / or by-products generated by first chemical adsorption; step 3, introducing second reaction gas into the atomic layer deposition reactor, and carrying out second chemical adsorption; step 4, adopting inert gas flow for purging to remove second reaction gas which is not adsorbed by the gas transmission pipeline and / or by-products generated by second chemical adsorption; and step 5, repeating the steps 1-4. The method is not limited by the shape or structure of thegas transmission pipeline, a coating is compact, and the film thickness is uniform.

Description

technical field [0001] The invention relates to the anti-corrosion technology of plasma etching or MOCVD equipment, in particular to a method for forming a corrosion-resistant coating (corrosion-resistant coating) on ​​the inner wall of a gas pipeline using ALD technology. Background technique [0002] Atomic layer deposition (ALD) technology is a chemical vapor phase thin film deposition technology based on an orderly, surface self-saturated reaction, which can coat substances on the surface of a substrate layer by layer in the form of a single atomic film. The precursors are alternately pulsed into the reaction chamber and gas-solid phase chemical adsorption reactions occur on the surface of the deposition substrate to form a thin film. During atomic deposition, the chemical reaction of a new atomic film is directly linked to the previous layer in such a way that only one layer of atoms is deposited per reaction. When the ALD is growing the film, the appropriate precursor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/40
CPCC23C16/45525C23C16/455C23C16/4401C23C16/403
Inventor 朱生华曹芳成陈星建倪图强
Owner ADVANCED MICRO FAB EQUIP INC CHINA