Insulating layer structure of thin film sensor based on metal substrate

The invention discloses an insulating layer structure of a thin film sensor based on a metal substrate. The structure comprises a metal substrate layer, a bonding layer arranged on the metal substratelayer, an insulating layer arranged on the bonding layer and a sensor circuit layer arranged on the insulating layer, and the insulating layer is formed by depositing aluminum oxide layer by layer atdifferent times according to different processes. According to the invention, the aluminum oxide insulating layer is rapidly manufactured by using an electron beam evaporation process, and the aluminum oxide insulating layer prepared by means of the step covering capability of an atomic layer stacking process can cover pinholes in the aluminum oxide insulating layer manufactured by using the electron beam evaporation process, so that no short circuit occurs between the sensor circuit layer and the metal substrate; and meanwhile, the thickness of the aluminum oxide insulating layer manufactured through the atomic layer stacking process is 10-500 nm, so that a large amount of time and cost cannot be generated. The structure is simple in structure, and the problem that the thin film sensor based on the metal substrate is short-circuited when used under the high-temperature environment condition is solved on the premise that time and cost are not increased.