Insulating layer structure of thin film sensor based on metal substrate

Abstract

The invention discloses an insulating layer structure of a thin film sensor based on a metal substrate. The structure comprises a metal substrate layer, a bonding layer arranged on the metal substratelayer, an insulating layer arranged on the bonding layer and a sensor circuit layer arranged on the insulating layer, and the insulating layer is formed by depositing aluminum oxide layer by layer atdifferent times according to different processes. According to the invention, the aluminum oxide insulating layer is rapidly manufactured by using an electron beam evaporation process, and the aluminum oxide insulating layer prepared by means of the step covering capability of an atomic layer stacking process can cover pinholes in the aluminum oxide insulating layer manufactured by using the electron beam evaporation process, so that no short circuit occurs between the sensor circuit layer and the metal substrate; and meanwhile, the thickness of the aluminum oxide insulating layer manufactured through the atomic layer stacking process is 10-500 nm, so that a large amount of time and cost cannot be generated. The structure is simple in structure, and the problem that the thin film sensor based on the metal substrate is short-circuited when used under the high-temperature environment condition is solved on the premise that time and cost are not increased.

Description

technical field [0001] The invention relates to an insulating layer structure of a thin-film sensor based on a metal substrate, belonging to the technical field of thin-film sensors. Background technique [0002] With the industrial upgrading of the industrial Internet and intelligent manufacturing, real-time monitoring of the manufacturing process has become more and more important. Not only can the acquisition of key process parameters in the manufacturing process improve product quality and improve production efficiency, but also can detect problems in advance and timely Intervene to avoid serious accidents. As a sensor that obtains key process parameters and other data, it plays a very important role. However, due to the large size of traditional sensors, it is difficult to get close to the point to be measured. Large, destroying the authenticity of detection; at the same time, due to the slow response of traditional sensors, there is a large hysteresis, it is difficult...

AI Technical Summary

Problems solved by technology

However, conventional thin-film sensors based on silicon substrates are difficult to apply to high temperature, high pressure, large strain and corrosive situations due to the brittleness of the substrate material and the lack of high temperature resistance.

[0003] In order to solve the above problems, thin-film sensors based on metal substrates have been developed. However, due to the particularity of metal substrates, the substrates need to be polished in a traditional processing environment with low cleanliness, and then transferred to the ultra-clean room for sensor production. The substrate is very easy to contain particles and other pollutants, which will cause problems in subsequent processes

For example, aluminum oxide, an insulating material based on metal-based thin-film sensors used in high-temperature environments, is prone to needles in the insulating layer of aluminum oxide during the preparation process of electron beam evaporation (E-beam evaporation) through physical vapor deposition (PVD). pin hole, causing a short circuit between the sensor circuit layer and the metal substrate, resulting in insulation failure

However, the use of atomic layer deposition (ALD) has strong coverage and no pinholes in the prepared alumina insulating layer. However, due to the low deposition efficiency of the process, an insulating layer with a certain thickness required for the insulation capacity under high temperature conditions can be produced. , which takes a lot of time and cost

Therefore, all can't well solve the problem of prior art

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