Composite substrate and method of manufacturing composite substrate
A technology of composite substrates and substrates, applied in impedance networks, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc., and can solve problems such as low yield
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Embodiment 1
[0041] About 25 nm of SiN was deposited on one face of an LT wafer having a diameter of 150 mm by the PVD method to form a diffusion preventing layer. Then, a silicon oxide film was formed to a thickness of about 3 µm on the diffusion preventing layer by CVD. The silicon oxide film was polished and bonded as an intermediate layer to a p-type silicon wafer having a resistivity of 2000 Ωcm. The LT wafer used is highly conductive with approximately 4 x 10 -11 / Ωcm bulk conductivity. After joining, heat treatment was applied at 100° C. for 48 hours in a nitrogen atmosphere. Then, the LT layer was thinned to a thickness of 20 μm by grinding and polishing. Then, in order to further improve the joint strength, heat treatment was performed at 250° C. for 24 hours in a nitrogen atmosphere.
[0042] The pyroelectricity of the bonded substrates manufactured as described above was evaluated by surface potential. After leaving the bonded substrates on a hot plate at 250°C for 20 secon...
Embodiment 2
[0047] About 25 nm of SiN was deposited on one face of an LT wafer having a diameter of 150 mm by the PVD method to form a diffusion preventing layer. Then, a silicon oxide film was formed to a thickness of about 3 µm on the diffusion preventing layer by CVD. The silicon oxide film was polished and bonded as an intermediate layer to a p-type silicon wafer having a resistivity of 2000 Ωcm. Prior to bonding, the bonding surfaces are surface activated by plasma activation methods. The LT wafer used is highly conductive with approximately 4 x 10 -11 / Ωcm bulk conductivity. After joining, heat treatment was applied at 100° C. for 48 hours in a nitrogen atmosphere. Then, the LT layer was thinned to a thickness of 20 μm by grinding and polishing. Then, in order to further improve the joint strength, heat treatment was performed at 250° C. for 24 hours in a nitrogen atmosphere.
[0048] The pyroelectricity of the bonded substrates manufactured as described above was evaluated by ...
Embodiment 3、4
[0050] A SiN diffusion preventing film was deposited on one face of an LT wafer having a diameter of 150 mm by PVD to form a diffusion preventing layer of about 25 nm. Then, a silicon oxide film was formed to a thickness of about 3 µm on the diffusion preventing layer by CVD. After the silicon oxide film was polished and the surface was activated, the silicon oxide film was bonded as an intermediate layer to a p-type silicon wafer having a resistivity of 2000 Ωcm. Before bonding, the bonding surface is surface-activated by various activation methods (ion beam activation method, ozone water activation method). The LT wafer used is highly conductive with approximately 4 x 10 -11 / Ωcm bulk conductivity. After joining, heat treatment was applied at 100° C. for 48 hours in a nitrogen atmosphere. Then, the LT layer was thinned to a thickness of 20 μm by grinding and polishing. Then, in order to further improve the joint strength, heat treatment was performed at 250° C. for 24 ho...
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