Method for measuring four-dimensional electron energy loss spectrum of to-be-measured sample
A technology of electron energy loss and sample, applied in the field of physics research, can solve the problems of momentum and energy combination, and achieve the effect of convenient upgrade
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Embodiment 1
[0066] This embodiment provides a method for measuring the phonon dispersion spectrum near the diamond / cubic boron nitride heterojunction interface, the method comprising the following steps:
[0067] Put the prepared diamond / cubic boron nitride heterojunction electron microscope sample into the electron microscope, adjust the belt axis, adjust the optical path at the convergence half angle of 20mrad (ie, the large convergence half angle), and switch to 3mrad convergence half angle (ie small convergence half angle) , use the projection lens to adjust the diffraction pattern, so that the central transmission spot and two first-order diffraction spots are located in the slit of the slit diaphragm, the energy channel is selected as 0.0005eV / ch, and the EELS astigmatism is adjusted, and Γ'MΓMΓ near the interface can be measured 'The dispersion signal. A monochromator can be inserted between the electron gun and the sample to limit the energy passing through the electron beam and i...
Embodiment 2
[0070] This embodiment provides a method for measuring the electronic band structure near the diamond / cubic boron nitride heterojunction interface, the method comprising the following steps:
[0071] Put the prepared diamond / cubic boron nitride heterojunction electron microscope sample into the electron microscope, adjust the belt axis, adjust the optical path at the convergence half angle of 15mrad, switch to 0.1mrad convergence half angle, and use the projection lens to adjust the diffraction pattern to make the center transmit The spot and two first-order diffraction spots are located in the slit of the slit diaphragm, the energy channel is selected as 0.01eV / ch, and the EELS astigmatism is adjusted, the electronic band structure of Γ'MΓMΓ' near the interface can be measured. A monochromator can be inserted between the electron gun and the sample to limit the energy passing through the electron beam and improve energy resolution.
Embodiment 3
[0073] This embodiment provides a method for measuring the d-d exciton dispersion relationship from the bulk state of nickel oxide NiO to the surface, the method comprising the following steps:
[0074] Put the prepared NiO electron microscope sample into the electron microscope, adjust the belt axis, adjust the optical path at the convergence half angle of 35mrad, switch to the convergence half angle of 0.5mrad, and use the projection lens to adjust the diffraction pattern so that the central transmission spot and two first-order diffraction spots Located in the slit of the slit diaphragm, the energy channel is selected to be 0.005eV / ch, the EELS astigmatism is adjusted, and the electron beam scans from the body to the surface of the sample, and the change of the dispersion of the d-d excitons of NiO from the body to the surface can be measured. A monochromator can be inserted between the electron gun and the sample to limit the energy passing through the electron beam and imp...
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