A kind of anti-reflection coating composition and its application

Abstract

The present invention provides an antireflection coating composition, which can strongly absorb radiation of 100 to 300 nm by using the matting resin of the present invention, especially has high light absorption performance at 248 nm, and the extinction coefficient K reaches 0.4 or more or 0.5 or more, thereby Allows the use of thinner coatings and shorter etching times, and the prepared anti-reflection coating material is easy to remove, and is particularly suitable for use in thin-layer photoresists to obtain high-resolution photolithographic patterns; at the same time, the present invention The BARC layer also has an improved plasma etch rate relative to the photoresist material, enabling the integrity of the image to be transferred to the substrate for a good photoresist image. Further, through the interaction of solid components, the interference effect in the photoresist can be eliminated; and through the joint action of the catalyst, the crosslinking agent and the matting resin of the present invention, a kind of photoresist with good storage properties can be obtained. Stable, highly differential solubility antireflective coating composition after curing.

Description

technical field [0001] The present invention relates to the technical field of photolithography, and more particularly, the present invention relates to an anti-reflection coating composition and its application. Background technique [0002] In the lithography process of integrated circuit manufacturing, due to the optical reflection of the bottom layer of the substrate, the sinusoidal periodic variation of the light intensity (abbreviated as "Iz") along the depth direction of the photoresist leads to the sinusoidal fluctuation of the sidewall of the photoresist pattern and the CD Poor size controllability. The photoresist opening energy (referred to as "Eth") and the optimal exposure energy (referred to as "Eop") show sinusoidal periodic fluctuations with the increase of the photoresist film thickness, which makes the exposure energy controllability of the non-flat surface photosensitive. Difference. Ultraviolet light is reflected to the dark area of ​​AERIAL IMAGE throu...

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Problems solved by technology

[0004] The deficiencies of the current BARC layer are: 1. The extinction coefficient k of the existing BARC layer is below 0.4. In order to eliminate the standing waves and interference effects produced in the photolithography process, the existing BARC layer needs to use a thicker thickness, which makes it difficult to remove; further However, if used in a thin layer of photoresist, a longer etching time will over-erode the unexposed part of the photoresist coating, so that the photoresist cannot protect the pattern, and thus cannot produce high-resolution photolithography. 2. The etching rate is low, resulting in excessive loss of the unexposed part of the photoresist film during the etching process, making the photoresist pattern damaged or difficult to accurately transfer to the substrate; 3. Using acid as a catalyst, storage stability Poor; and the acid catalyst will form residues during plasma etching, which will affect the subsequent process and cause a high defect rate of the substrate; it will shorten the service life of the abutment during spin coating and baking

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