Flexible memristor with self-repairing capability and production method

Abstract

The invention provides a flexible memristor with a self-repairing capability and a production method. The method comprises the steps: taking a metal sheet as a memristor positive electrode, taking manganese dioxide deposited on carbon fiber paper (CFP) as a memristor negative electrode, taking a ZnSO4-MnSO4 weak acid solution as an electrolyte solution, and carrying out an oxidation / reduction reaction on a manganese dioxide film through the diffusion of ions in the solution. A structure capable of generating an electrochemical reaction spontaneously is formed, and the resistance change of the memristor is realized. According to the invention, the liquid electrolyte is used as the dielectric layer, and the memristive performance is realized by a thin film layer formed by the oxidation / reduction reaction of the liquid electrolyte and the negative electrode so that the reaction efficiency is improved by utilizing the interface reaction, the ion concentration can be adjusted according to different requirements, and the adjustment of the memristive performance is further realized. The invention provides the production method of the liquid flexible memristor, which is easy to realize physically, simple in production process, stable in quality, high in circularity, low in cost and high in production efficiency.

Description

technical field [0001] The invention relates to the application fields of micro-nano electronic devices and nonlinear circuits, in particular to a flexible memristor with self-repair capability and a preparation method. Background technique [0002] Memristor (memristor) is the fourth passive circuit component after resistors, capacitors and inductors entered the mainstream electronics field, and it is a passive circuit component related to magnetic flux and charge. As early as 1971, Leon Chua, a pioneer in the theory of international nonlinear circuits and cellular neural networks, theoretically predicted the existence of memristors based on the logical integrity of circuit theory. In 2008, Hewlett-Packard Labs built a memristor prototype device experimentally for the first time, which confirmed Leon Chua's theory about memristors and attracted worldwide attention. Memristors have novel nonlinear electrical properties, and have the characteristics of high density, small si...

AI Technical Summary

Problems solved by technology

Most of them adopt the switch model and working mechanism similar to HP memristors, and the manufacturing process is complicated and the cost is high. It is not general and universal for the study of memristor characteristics, memristor circuit theory, and electronic circuit design.

[0006](2) The preparation of physical memristors that have been reported requires high requirements in raw material selection and preparation process methods, harsh conditions, and ordinary laboratories or scientific research units It is difficult to complete the preparation of related physical memristor components

[0008] (1) The preparation process is complex and the preparation cycle is long, and the prepared memristor has weak memristive performance and is only suitable for low-frequency signals

[0009]The reason is that the resistive layer is mostly deposited on the surface of the lower electrode with ceramic materials, the internal structure of the material itself is dense, and the number of lattice defects and holes is relatively small

[0010](2) The material of the memristor is hard and brittle, and it is easy to be broken or damaged by collision, bending, etc., and it is not a flexible memristor

[0011] In addition, there are still problems and deficiencies such as relatively strict process conditions and low product rate

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