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A kind of preparation method of self-supporting nano-cone diamond

A diamond and nano-cone technology, applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of high hardness and chemical inertness, inconvenience, and changing the shape of diamonds

Active Publication Date: 2022-07-01
JILIN TEACHERS INST OF ENG & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the extremely high hardness and chemical inertness, it is not convenient to change the morphology of diamond by mechanical processing or wet chemical etching

Method used

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  • A kind of preparation method of self-supporting nano-cone diamond
  • A kind of preparation method of self-supporting nano-cone diamond
  • A kind of preparation method of self-supporting nano-cone diamond

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Example 1: Preparation of nanocone diamond film on silicon wafer substrate

[0020] A silicon wafer with a size of 1 cm × 1 cm is selected as a growth substrate, and the silicon wafer is first cleaned to remove surface contaminants. In order to improve the nucleation density of the growth process, the growth surface was ground on sandpaper containing diamond powder for 15-30 minutes, and then placed in alcohol containing diamond powder for ultrasonic treatment for 1 hour, and finally passed through acetone, alcohol and deionized water. After ultrasonic cleaning for 10 min in turn, dried with nitrogen, the diamond film was deposited in a CVD reaction chamber. The main growth parameters are: the gas flow rates of hydrogen, methane, and nitrogen are 200 sccm, 10 sccm, and 1 sccm, respectively, the microwave power is 350 W, the cavity pressure is 8 KPa, and the growth time is 5 hours. The nitrogen flow was turned off and the methane concentration was lowered. The gas flow ...

Embodiment 2

[0025] Example 2: Preparation of Molybdenum Substrate Nanocone Diamond Film

[0026] A molybdenum sheet with a size of 1 cm × 1 cm was selected as the growth substrate, and the molybdenum sheet was first cleaned to remove surface contaminants. In order to improve the nucleation density during the growth process, the growth surface was ground on sandpaper containing diamond powder for 15-30 minutes, and then placed in alcohol containing diamond powder for ultrasonic treatment for 2 hours, and finally ultrasonicated in acetone, alcohol and deionized water in sequence. After cleaning, it was blown dry with nitrogen and put into the CVD reaction chamber to deposit diamond film. The main growth parameters are: the gas flow rates of hydrogen, methane, and nitrogen are 200 sccm, 16 sccm, and 1 sccm, respectively, the microwave power is 350 W, the cavity pressure is 8 KPa, and the time is 5 hours. The nitrogen flow was turned off and the methane concentration was lowered. The gas flo...

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Abstract

The invention relates to a preparation method of self-supporting nano-cone diamond, belonging to the technical field of diamond nano-structure and preparation thereof. First with high CH 4 with H 2 The flow ratio and nitrogen doping are introduced to grow diamond and non-diamond mixed phases to form diamond inverted cones; then reduce CH 4 with H 2 The diamond phase is grown proportionally to the flow rate; the substrate is removed, the non-diamond phase is etched away by high temperature annealing in the air, and the self-supporting nano-cone diamond is prepared. The present invention passes through different CH 4 with H 2 The flow ratio deposition growth and the introduction of nitrogen help to grow the 100-face crystal orientation to form an inverted cone, prepare a high-density nanocone diamond, and greatly increase the surface area of ​​the diamond film; and compared with the top-down mask method or The plasma etching method has a simple preparation method and is convenient for large-scale preparation.

Description

technical field [0001] The invention belongs to the technical field of diamond nanostructure and preparation thereof, and relates to a preparation method of a novel self-supporting nanocone diamond. Background technique [0002] Diamond is a functional material with excellent properties such as super hardness, high thermal conductivity, chemical inertness, and stability. The preparation of diamond nanostructures (such as nanotextures, nanowires and porous diamonds, etc.) can be applied in many fields of research. However, due to the extremely high hardness and chemical inertness, it is inconvenient to change the morphology of diamond by machining or wet chemical etching. [0003] The invention prepares a diamond film structure which utilizes the bottom-up method combined with the diamond self-growth orientation to generate self-supporting nano-cone, which greatly increases the surface area of ​​the diamond film. [0004] The prior art that is close to the present invention...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/511C23C16/56C23C16/01
CPCC23C16/274C23C16/511C23C16/56C23C16/01
Inventor 袁晓溪杨峰曾旭李楠张文颖李宏郭明冯悦姝李美萱杨璐赫
Owner JILIN TEACHERS INST OF ENG & TECH