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Method for depositing aluminum oxide film in PERC battery

A deposition method and technology of aluminum oxide film, which are applied in the field of solar cells to achieve the effect of reducing the proportion of EL black edges, improving uniformity and avoiding CVD reaction

Pending Publication Date: 2021-05-25
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] None of the above methods have improved the specific operation of aluminum oxide film deposition in the ALD method, and the ALD process is closely related to reducing the blackening ratio of EL and improving the conversion efficiency of PERC cells. Therefore, it is necessary to provide a method for depositing aluminum oxide films in PERC cells. method

Method used

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  • Method for depositing aluminum oxide film in PERC battery
  • Method for depositing aluminum oxide film in PERC battery
  • Method for depositing aluminum oxide film in PERC battery

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0040] This embodiment provides a method for depositing an aluminum oxide film in a PERC battery, the deposition method comprising the following steps:

[0041] Insert the oxidized and annealed cells into the aluminum boat and send them into the ALD tube furnace. Vacuumize until the absolute pressure inside the furnace tube does not exceed 1.2mbar and the absolute pressure outside the furnace tube is 6mbar, and the temperature rises at a rate of 0.6°C / s to 250°C, then alternately feed trimethylaluminum and H 2 O is deposited, and after the deposition is completed, the nitrogen gas is passed to break the vacuum, and the deposition of the aluminum oxide film in the PERC cell is completed; the number of times of the alternate feeding is 27 times;

[0042] During a single feeding process, the pulse time of trimethylaluminum is 3s, the purge time is 6s, and the flow rate of trimethylaluminum is 18sccm;

[0043] During a single pass, H 2 The pulse time of O is 3s, the purge time i...

Embodiment 2

[0046] This embodiment provides a method for depositing an aluminum oxide film in a PERC battery, the deposition method comprising the following steps:

[0047] Insert the oxidized and annealed cells into the aluminum boat and send them into the ALD tube furnace. Vacuumize until the absolute pressure inside the furnace tube does not exceed 1.2mbar and the absolute pressure outside the furnace tube is 4mbar, and the temperature rises at a rate of 0.55°C / s to 245°C, then alternately feed trimethylaluminum and H 2 O is deposited, and after the deposition is completed, the nitrogen gas is passed to break the vacuum, and the deposition of the aluminum oxide film in the PERC cell is completed; the number of times of the alternate feeding is 24 times;

[0048] During a single feeding process, the pulse time of trimethylaluminum is 4s, the purge time is 8s, and the flow rate of trimethylaluminum is 10sccm;

[0049] During a single pass, H 2 The pulse time of O is 4s, the purge time ...

Embodiment 3

[0052] This embodiment provides a method for depositing an aluminum oxide film in a PERC battery, the deposition method comprising the following steps:

[0053] Insert the oxidized and annealed cells into the aluminum boat and send them into the ALD tube furnace. Vacuumize until the absolute pressure inside the furnace tube does not exceed 1.2mbar and the absolute pressure outside the furnace tube is 8mbar. The temperature rises at a rate of 0.7°C / s to 255°C, then alternately feed trimethylaluminum and H 2 O is deposited, and after the deposition is completed, the nitrogen gas is passed to break the vacuum, and the deposition of the aluminum oxide film in the PERC cell is completed; the number of times of the alternate feeding is 30 times;

[0054] During a single feeding process, the pulse time of trimethylaluminum is 2s, the purge time is 4s, and the flow rate of trimethylaluminum is 24sccm;

[0055] During a single pass, H 2 The pulse time of O is 2s, the purge time is 8s...

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Abstract

The invention provides a method for depositing an aluminum oxide film in a PERC battery, which comprises:on the basis of the existing process route of performing alkali texturing, low-pressure diffusion, SE laser doping, etching, oxidizing and annealing, depositing the aluminum oxide film, plating a silicon nitride film on the front surface, plating a silicon nitride film on the back surface, performing laser grooving, performing silk-screen printing and sintering, improving deposition method of aluminum oxide film deposition, putting a battery piece obtained after oxidation annealing into an ALD tube furnace, and alternately introducing trimethylaluminum and H2O under the vacuum condition for deposition, wherein the number of times of alternate introduction is 20 to 32. Therefore, the uniformity of the obtained aluminum oxide film is improved, the deposition time is short, the proportion of the EL black edge after silk-screen printing and sintering is low, and the conversion efficiency of a PERC battery is improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a PERC cell, in particular to a method for depositing an aluminum oxide film in the PERC cell. Background technique [0002] Solar power generation devices, also known as solar cells or photovoltaic cells, can directly convert solar energy into electrical energy. The principle of power generation is based on the photovoltaic effect of semiconductor PN junctions. With the development of science and technology, PERC solar cells with partial contact back passivation have appeared. The core is to cover the back of the silicon wafer with aluminum oxide and silicon nitride to passivate the surface and improve the long-wave response, thereby improving the battery performance. conversion efficiency. [0003] Alumina deposition methods include plasma-enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD), ALD deposits alumina, sintering after screen printing, SiN ...

Claims

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Application Information

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IPC IPC(8): H01L31/18C23C16/52C23C16/455C23C16/40
CPCH01L31/1868C23C16/45527C23C16/403C23C16/52Y02P70/50
Inventor 赵颖厉文斌任勇何悦
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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