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Low dielectric constant cross-linked fluorine-containing polyarylether nitrile film and its preparation method and application

A low dielectric constant, polyarylether nitrile technology, applied in the field of polymer synthesis, can solve the problems of increasing water absorption, affecting the overall performance of the film, and deteriorating the mechanical properties of the film, achieving the effect of excellent heat resistance and strength

Active Publication Date: 2022-05-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method has obvious disadvantages, that is, the size of micropores is difficult to control, and the existence of pores often leads to poor mechanical properties of the film and increased water absorption, thereby affecting the overall performance of the film.

Method used

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  • Low dielectric constant cross-linked fluorine-containing polyarylether nitrile film and its preparation method and application
  • Low dielectric constant cross-linked fluorine-containing polyarylether nitrile film and its preparation method and application
  • Low dielectric constant cross-linked fluorine-containing polyarylether nitrile film and its preparation method and application

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Experimental program
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preparation example Construction

[0030] Concrete, the preparation method of low dielectric constant cross-linked type fluorine-containing polyarylene ether nitrile film, comprises the following steps:

[0031]

[0032] The cross-linkable polyarylether nitrile I and catalyst are dissolved in polar solvents, and the cross-linkable polyarylether nitrile film is prepared by casting film; the obtained cross-linkable polyarylether nitrile film is heated through a gradient After drying and shaping, then conduct high-temperature heat treatment at 300-360°C; then after cooling, soak the film in water, and finally dry it to obtain a low dielectric constant cross-linked fluorine-containing polyarylene ether nitrile film;

[0033] Among them, in the crosslinkable polyarylether nitrile I, 0<m≤1, n=1-m, -Ar- is derived from dihydric phenol:

[0034] Wherein, the catalyst is at least one of Lewis acid, protonic acid or acidic oxide.

[0035] Crosslinkable polyarylether nitrile I of the present invention can be prepared ...

Embodiment 1

[0051]

[0052] Dissolve 2g of cross-linkable polyarylether nitrile I-a and 0.01g of zinc chloride in 20mL of N-methylpyrrolidone, and prepare a cross-linkable polyarylether nitrile film by casting film method. In order to fully remove the solvent, the oven program The temperature is sequentially set to 80°C-2h, 100°C-2h, 120°C-2h, 160°C-2h and 200°C-2h.

[0053] Put the dried film into a high-temperature oven for heat treatment at 320°C for 4 hours; then cool it down to room temperature naturally, soak the sample film in warm water at 60°C for 12 hours, peel the film from the glass plate, and at the same time The catalyst is completely removed and then dried to obtain a cross-linked polyarylether nitrile film.

[0054] The cross-linked polyarylether nitrile film made by the above steps has a thickness of 18um, and its performance test: T 5％ The thermal decomposition temperature is 520°C and the tensile strength is 65MPa. At the same time, its dielectric constant at 1 kHz...

Embodiment 2

[0056]

[0057] 2g crosslinkable polyarylether nitrile I-a, 0.02g iron trichloride are dissolved in 20mL N-methylpyrrolidone, prepare crosslinkable polyarylether nitrile film by cast film-forming method, in order to fully remove solvent, oven The program temperature was sequentially set to 80°C-2h, 100°C-2h, 120°C-2h, 160°C-2h and 200°C-2h.

[0058] Put the dried film into a high-temperature oven for heat treatment, heat treatment at 360°C for 2 hours; then cool it to room temperature naturally, soak the sample film in warm water at 60°C for 12 hours, peel the film from the glass plate, and at the same time The catalyst is completely removed and then dried to obtain a cross-linked polyarylether nitrile film.

[0059] The cross-linked polyarylether nitrile film made by the above steps has a thickness of 22um, and its performance test: T 5％ The thermal decomposition temperature is 528°C and the tensile strength is 83MPa. At the same time, its dielectric constant at 1kHz is ...

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Abstract

The invention discloses a low dielectric constant cross-linked fluorine-containing polyarylether nitrile film, a preparation method and application thereof, and belongs to the technical field of polymer synthesis. In the present invention, the crosslinkable polyarylether nitrile I and the catalyst are dissolved in a polar solvent, and a crosslinkable polyarylether nitrile film is obtained by casting a film-forming method; after drying and molding, high temperature heat treatment is carried out ; After cooling, soak the film in water and dry to obtain a low dielectric constant cross-linked fluorine-containing polyarylether nitrile film. The present invention uses the cross-linkable fluorine-containing polyarylether nitrile as raw material, and through the cross-linking reaction, the polar cyano group on the polyarylether nitrile main chain undergoes a cross-linking reaction to form a dense network structure, thereby obtaining low Dielectric fluorine-containing polyarylene ether nitrile film, and has more excellent heat resistance and strength. The preparation method of the invention is simple and easy for industrial operation, and the obtained low-dielectric film can be applied in the fields of integrated circuits, 5g communication antenna materials, flexible copper-clad boards, and the like.

Description

technical field [0001] The invention belongs to the technical field of polymer synthesis, and in particular relates to a low dielectric constant cross-linked fluorine-containing polyarylether nitrile film and its preparation method and application. Background technique [0002] With the rapid development of electronic information technology, electronic information products are developing in the direction of high frequency and high speed, multi-functionality, small size, ultra-thin and light weight. At the same time, with the development of VLSI, the interconnection density in the chip is continuously increasing, the width and spacing of interconnection lines are continuously decreasing, and the parasitic effects generated by interconnection resistance (R) and capacitance (C) are becoming more and more obvious. , causing a serious delay in the signal. The main way to solve this problem is to use low dielectric constant packaging materials that are less affected by the transm...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J7/12C08J5/18C08L71/10C08G65/40
CPCC08G65/4006C08G65/4093C08J7/12C08J5/18C08J2371/10Y02P20/54
Inventor 黄宇敏刘宸辰曾子秋王登善刘孝波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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