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Method for patterning transfer of graphdiyne film

A graphdiyne and patterning technology, applied in the field of patterned transfer graphdiyne thin films, can solve the problems of difficulty in etching clean by patterned etching, limiting the application of graphdiyne characterization and analysis, uncontrollable shape and area of ​​graphdiyne thin films, etc. The effect of increasing the complexity of the process

Active Publication Date: 2021-05-28
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, graphyne films synthesized on copper foil are difficult to transfer in a directional manner. The shape and area of ​​graphyne films transferred in the laboratory are often uncontrollable, and patterned etching is difficult to etch cleanly, which limits the characterization and analysis of graphyne films. For applications in optoelectronic devices, it is necessary to develop a method for patterning directionally transferred graphdiyne thin films

Method used

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  • Method for patterning transfer of graphdiyne film
  • Method for patterning transfer of graphdiyne film
  • Method for patterning transfer of graphdiyne film

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Embodiment 1

[0042] 1. Uniform photoresist on Si substrate with 300nm thick oxide layer - pre-baking - UV exposure - post-baking - development - thermal evaporation of chromium gold - deglue - get a pattern with 400 field electrodes The mark is the target base.

[0043] 2. Cut the target substrate into small pieces of 5mm×5mm (such as Figure 1a and Figure 1b Shown), uniform polymethyl methacrylate (such as Figure 2a and Figure 2b shown), and then carry out patterned electron beam exposure to polymethyl methacrylate (each field exposes a square pattern with a size of 70 μm×70 μm), develop, and expose the place where the graphyne film pattern is expected to be transferred (such as Figure 3a and Figure 3b shown).

[0044] 3. Thin the graphyne on the copper foil to 10-20nm by oxygen plasma reaction etching, evenly spread polymethyl methacrylate on the copper foil with graphyne film, heat and dry at 120°C / 1min The copper foil was removed by etching with a saturated ferric chloride so...

Embodiment 2

[0047] 1. Uniform photoresist on the Si substrate with a 300nm thick oxide layer - pre-baking - ultraviolet exposure - post-baking - development - thermal evaporation of chromium gold - deglue - to obtain a 400-field electrode pattern The mark is the target base.

[0048] 2. Cut the target substrate into large pieces of 3cm×3cm, apply the photoresist evenly, and dry it before 85℃ / 2min, then pattern the photoresist with UV exposure, and then heat it at 95℃ / 80s and then dry it. Develop to expose the place where the graphyne film pattern is expected to be transferred.

[0049] 3. Thin the graphdiyne (2.5×2.5cm) on the copper foil to 10-20nm by reactive etching with oxygen plasma, evenly spread polymethyl methacrylate on the copper foil with the graphdiyne film twice, Heat and dry at 120°C / 1min, and use saturated ferric chloride solution to react for 12h to etch and remove the copper foil. Use a clean silicon wafer to pick up the polymethyl methacrylate with graphyne attached, a...

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Abstract

The invention discloses a method for patterning transfer of a graphdiyne film, and belongs to the field of processing of two-dimensional materials. The method comprises the following steps of: uniformly coating photoresist on a target substrate, carrying out patterning exposure and development, and exposing a place where the pattern of the graphdiyne film is expected to be transferred; transferring the graphdiyne film to the developed target substrate through a wet transfer method; and removing photoresist from the target substrate on which the graphdiyne film is transferred, so as to obtain the patterned graphdiyne film. The invention aims to overcome the defects of the prior art, and provides the method for patterned transfer of the graphdiyne thin film in the laboratory; the method is simple to operate; the precision and success rate of patterned transfer of the graphdiyne film are high; the obtained graphdiyne film is relatively clean; and the process problem that the transfer position, shape and size of the graphdiyne film are uncontrollable is solved.

Description

technical field [0001] The invention relates to the field of processing of two-dimensional materials, in particular to a method for patterned transfer of graphyne thin films. Background technique [0002] Graphdiyne is another two-dimensional carbon material discovered after graphene. In 2010, Chinese scientists successfully synthesized sp and sp 2 Graphdiyne formed by two hybrid states (hereinafter referred to as "graphyne"), since then, the research on this new type of carbon allotrope has entered the experimental stage. Theoretically, graphyne with ultra-high carrier mobility and suitable natural band gap has broad prospects in the field of optoelectronic devices. At the same time, the conjugated diyne bond and uniform pore structure in graphyne structure make it It shows great application potential in the fields of energy storage and conversion and catalysis. [0003] However, graphyne films synthesized on copper foil are difficult to transfer in a directional manner. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/76
CPCG03F1/76
Inventor 张跃王利华张铮黄梦婷刘璇陈匡磊高丽于慧慧洪孟羽汤文辉
Owner UNIV OF SCI & TECH BEIJING
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