1S1R device based on metallic insertion layer and preparation method thereof

A 1S1R, metallic technology, applied in the field of information storage, can solve the problems of insufficient anti-crosstalk ability, insufficient leakage current suppression performance, low stability, etc., and achieve the effects of stable electrical performance, enhanced stability, and stable performance.

Pending Publication Date: 2021-06-01
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the current 1S1R devices still have the defects of low stability, insufficient crosstalk resistance and

Method used

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  • 1S1R device based on metallic insertion layer and preparation method thereof
  • 1S1R device based on metallic insertion layer and preparation method thereof
  • 1S1R device based on metallic insertion layer and preparation method thereof

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preparation example Construction

[0062] Based on the same inventive concept, the present application also provides a method for preparing a 1S1R device based on metallic intercalation, comprising the following steps:

[0063] S1, providing the bottom electrode;

[0064] S2, preparing a conversion layer on the surface of the bottom electrode;

[0065] S3. Prepare a metallic intercalation layer on the surface of the conversion layer away from the bottom electrode;

[0066] S4. Prepare a resistive switch layer on the surface of the metal intercalation layer away from the bottom electrode;

[0067] S5. Prepare a top electrode on the surface of the resistive layer away from the bottom electrode;

[0068] Wherein, the metal intercalation material is one of Ti thin film, ITO thin film and TiN thin film.

[0069] The preparation method of the metallic intercalation layer in S3 is as follows: install titanium, indium tin oxide or titanium nitride on the magnetron sputtering equipment as the target material, control...

Embodiment 1

[0075] This embodiment provides a 1S1R device based on metallic intercalation, including a bottom electrode 1, a conversion layer 2, a metallic intercalation layer 3, a resistive layer 4, and a top electrode 5; wherein, the material of the bottom electrode 1 is Pt, The thickness is about 200nm; the material of conversion layer 2 is niobium oxide (NbO x ) film with a thickness of about 47nm; the material of the metallic intercalation layer 3 is a Ti film with a thickness of about 18nm; the material of the resistive layer 4 is silicon nitride (SiNO x ) film with a thickness of about 42 nm; the material of the top electrode 5 is a Ti film with a thickness of about 60 nm, and the shape of the top electrode 5 is circular with a diameter of 300 μm.

[0076] The preparation method of the above-mentioned 1S1R device is:

[0077] S1. Pretreat the surface of the carrier film substrate with the Pt bottom electrode. The pretreatment method is: sequentially use acetone, ethanol, and deion...

Embodiment 2

[0083] The structure and preparation method of the 1S1R device in this embodiment are the same as in Embodiment 1, the only difference is that in the step of preparing the resistive layer in this embodiment, the silicon dioxide target is installed on the magnetron sputtering equipment, and the other Parameters are all the same as in Example 1.

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Abstract

The invention provides a 1S1R device based on a metallic insertion layer and a preparation method thereof. The 1S1R device comprises a bottom electrode, a conversion layer, the metallic insertion layer, a resistive layer and a top electrode, wherein the metallic insertion layer is made of one of a Ti film, an ITO film and a TiN film. According to the 1S1R device, the metallic insertion layer is introduced into the 1S1R device, the metallic insertion layer serves as an intermediate electrode to connect two functional layers, more importantly, oxygen vacancies of a gate tube unit and a resistive random access memory unit do not interfere with each other in the working process, independent normal working of the two units is guaranteed, the stability of the two units is enhanced, and compared with the prior art, the 1S1R device has stable DC tolerance, very stable SET voltage, RESET voltage, threshold voltage, holding voltage and other related voltages, obvious storage window and gate ratio, can effectively reduce leakage current, and has strong anti-crosstalk capability.

Description

technical field [0001] The invention relates to the technical field of information storage, in particular to a metal intercalation-based 1S1R device and a preparation method thereof. Background technique [0002] With the advent of the 5G era, the amount of data will further explode, and people's requirements for information storage are getting higher and higher. With the rapid development of portable electronic devices, the proportion of flash memory (Flash) in the memory market is increasing day by day, but with the further shrinking of device size, flash memory technology is facing problems such as physical limits, so the development of the next generation of non-volatile Storage technology is imminent. [0003] Resistive RAM (RRAM) has the advantages of simple structure, low power consumption, high integration, fast erasing and writing speed, and compatibility with complementary metal oxide (CMOS) technology, etc., and has become one of the strong competitors for the ne...

Claims

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Application Information

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IPC IPC(8): H01L27/24H01L45/00
CPCH10B63/24H10N70/8833H10N70/026
Inventor 王浩余志颖潘希彦季杰檀秋阳马国坤桃李饶毅恒段金霞万厚钊彭小牛汪汉斌张军
Owner HUBEI UNIV
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