Preparation method of light absorption layer and near-infrared detector, and solar cell

A light absorbing layer and detector technology, applied in the field of detectors, can solve the problems of reducing photoelectric detection efficiency, increasing dark current, and high roughness, and achieving the effects of reducing leakage current channels, improving efficiency, and reducing dark current

Active Publication Date: 2021-06-04
SHENZHEN INST OF ADVANCED TECH
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  • Claims
  • Application Information

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Problems solved by technology

Due to the certain undulations and high roughness between different crystal grains on the surface of the light absorbing layer, the subsequent growth of a 60nm buffer layer of cadmium sulfide cannot effectively cover the precursor film, and it is easy to form a large number of leakage channels, r

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  • Preparation method of light absorption layer and near-infrared detector, and solar cell
  • Preparation method of light absorption layer and near-infrared detector, and solar cell
  • Preparation method of light absorption layer and near-infrared detector, and solar cell

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preparation example Construction

[0032] The invention provides a kind of preparation method of light absorbing layer, comprises the following steps:

[0033] S1. Provide a substrate, and prepare a bottom electrode on the substrate;

[0034] S2. Place the substrate prepared with a bottom electrode in a vacuum coating device, use Cu, Zn, Cd, Sn and Se as evaporation materials to evaporate simultaneously, and prepare a precursor on the bottom electrode;

[0035] S3. Perform the first annealing on the substrate prepared with the precursor, then use the polishing solution to polish the precursor after the first annealing, then use the etching solution to etch the precursor, and finally perform the second step annealing to obtain a light absorbing layer.

[0036] It should be noted that, in the embodiment of the present application, the substrate may be one of soda lime glass, polyimide film, titanium foil, stainless steel foil, and the like.

[0037] In some embodiments, S2 is specifically: placing the substrate...

Embodiment 1

[0065] The embodiment of the present application provides a method for preparing a near-infrared detector, comprising the following steps:

[0066] A1. Provide a soda-lime glass substrate. After the substrate is cleaned, it is placed in the chamber of the magnetron sputtering equipment, with Mo as the target material, and Ar gas is introduced to control the air pressure in the chamber to be 2.0Pa. Under the power of 350W DC sputtering for 8 circles, and then control the pressure in the chamber to 0.3Pa, DC sputtering for 4 circles under 1000W power, turn off the Ar gas, take out the sample after cooling for 8min, and obtain a Mo bottom electrode with a thickness of about 500nm on the substrate surface;

[0067] A2. Place the substrate prepared with the bottom electrode into the MBE vacuum coating chamber, and control the vacuum degree of the vacuum coating chamber to be 2×10 -5 Pa, the vacuum coating equipment adopts the five-source simultaneous evaporation method, uses Cu, Zn...

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Abstract

The invention provides a preparation method of a light absorption layer and a near-infrared detector, and a solar cell, and the preparation method of the light absorption layer comprises the following steps: providing a substrate, and preparing a bottom electrode on the substrate; placing the substrate in vacuum coating equipment, performing evaporation at the same time with Cu, Zn, Cd, Sn and Se as evaporation materials, and preparing a precursor on the bottom electrode; and annealing the substrate for the first time, polishing the substrate by using a polishing solution, etching the precursor by using an etching solution, and finally annealing the substrate for the second time to obtain the light absorption layer. According to the preparation method of the light absorption layer, the precursor is annealed for the first time, polished, etched and annealed for the second time, so that a subsequent CdS buffer layer can better cover the surface of the precursor, carrier recombination caused by a leakage current channel and defects between p-n junctions are reduced to a certain extent, dark current of a detector is further reduced, and the detector efficiency is improved.

Description

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Claims

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Application Information

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Owner SHENZHEN INST OF ADVANCED TECH
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