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Copper film catalyst for CVD (Chemical Vapor Deposition) growth of graphene and application of copper film catalyst

A graphene film and catalyst technology, applied in graphene, physical/chemical process catalysts, metal/metal oxide/metal hydroxide catalysts, etc., can solve the problems affecting graphene performance, uniformity and low crystallinity. , to achieve the effect of simple and easy preparation process, high crystallinity, easy to promote large-scale industrialization

Active Publication Date: 2021-06-08
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although Patent 1 (Chinese Publication No. CN106756870A) discloses a method for growing graphene by plasma-enhanced chemical vapor deposition without transfer, the graphene material prepared by it mainly exists in the form of few layers, and its uniformity and crystallinity are relatively low. ; It can be seen from the obtained SEM image that the prepared graphene material mainly exists in an "island-like" structure, with obvious wrinkles and cracks, which seriously affect the performance of graphene

Method used

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  • Copper film catalyst for CVD (Chemical Vapor Deposition) growth of graphene and application of copper film catalyst
  • Copper film catalyst for CVD (Chemical Vapor Deposition) growth of graphene and application of copper film catalyst
  • Copper film catalyst for CVD (Chemical Vapor Deposition) growth of graphene and application of copper film catalyst

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Sonicate the quartz plate with acetone, absolute ethanol, and deionized water for 15 minutes each, and then use CF 4 Perform plasma surface treatment on the quartz slice, first place the quartz slice in the plasma treatment instrument (frequency 13.56MHz), CF 4 The purity is 99.9%, the background vacuum is 1.0Pa, the power is 150W, and the time is 15min. 2 Protection for 5 minutes;

[0043] The sputter coating method is used to coat the quartz sheet; the steps and parameters of the sputter coating method include: putting the pretreated quartz sheet into the magnetron sputtering chamber, and the background vacuum is 7×10 -5 Pa, sputtering power 100W, sputtering pressure 0.1Pa, Ar 100sccm, sputtering time 10min. The thickness of the copper film in the gained copper film catalyst is 50nm;

[0044] Then put the obtained copper film catalyst into the chemical vapor deposition equipment, fill it with Ar=200sccm; then start to heat up, and when the temperature reaches 1084°...

Embodiment 2

[0046] Sonicate the quartz plate with acetone, absolute ethanol, and deionized water for 15 minutes each, and then use CF 4 Perform plasma surface treatment on the quartz slice, first place the quartz slice in the plasma treatment instrument (frequency 13.56MHz), CF 4 The purity is 99.9%, the background vacuum is 1.0Pa, the power is 150W, and the time is 15min. 2 Protection for 5 minutes;

[0047] Copper film is plated on the quartz sheet by adopting the method of thermal evaporation coating; the steps and parameters of the thermal evaporation include: putting the quartz sheet in a vacuum coating machine, closing each valve for vacuum treatment, the purity of the copper sheet is 99.999%, and the vacuum degree is greater than 1×10 - 3 Pa, substrate temperature 250 DEG C; The thickness of the copper film in the obtained copper film catalyst is 50nm;

[0048] Then put the copper film catalyst into the chemical vapor deposition equipment, fill it with Ar=200sccm; then start to...

Embodiment 3

[0051] Sonicate the quartz plate with acetone, absolute ethanol, and deionized water for 15 minutes each, and then use CF 4 Perform plasma surface treatment on the quartz slice, first place the quartz slice in the plasma treatment instrument (frequency 13.56MHz), CF 4 The purity is 99.9%, the background vacuum is 3.0Pa, the power is 150W, and the time is 15min. 2 Protection for 5 minutes;

[0052] The sputter coating method is used to coat the quartz sheet; the steps and parameters of the sputter coating method include: putting the pretreated quartz sheet into the magnetron sputtering chamber, and the background vacuum is 7×10 -5 Pa, sputtering power 100W, sputtering pressure 0.1Pa, Ar100sccm, sputtering time 20min;

[0053] The thickness of the copper film in the copper film catalyst in Example 3 is 100 nm. The obtained copper film catalyst was used to grow graphene in situ, and its preparation process was consistent with that of Example 1.

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Abstract

The invention relates to a copper film catalyst for CVD (chemical vapor deposition) growth of graphene and application of the copper film catalyst. The copper film catalyst comprises a quartz plate which is subjected to surface hydrophobic treatment and serves as a base material, and a copper film formed on the surface of the base material.

Description

technical field [0001] The present invention relates to a copper film catalyst for CVD growth graphene and its application, in particular to a method for growing a graphene film in situ on a quartz sheet using physical coating and chemical vapor deposition (CVD) technology, belonging to the field of graphene preparation . Background technique [0002] The CVD method can effectively regulate the structure and number of layers of graphene on the surface of a specific catalyst substrate by decomposing the carbon source and designing and controlling the process of carbon atom deposition in a high-temperature and low-pressure environment. The copper foil substrate has super With low carbon solubility and similar thermal conductivity to graphene materials, it has become one of the most common catalyst materials in the preparation of graphene by CVD. [0003] However, in the subsequent transfer process of CVD-grown graphene, pollutants will inevitably be introduced, resulting in w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/72B01J35/02C01B32/186B01J35/00
CPCB01J23/72C01B32/186B01J35/40
Inventor 于云孙付通冯爱虎陈兵兵于洋米乐宋力昕
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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