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High-thermal-conductivity silicon carbide material and preparation method thereof

A technology of silicon carbide and high thermal conductivity, which is applied in the field of mechanical seal materials, can solve the problems of difficult-to-sinter dense materials and low high-temperature diffusion coefficients, and achieve the effects of promoting sintering, improving thermal conductivity, and increasing fracture toughness

Inactive Publication Date: 2021-06-11
宁波市飞固密封科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, due to the strong covalent bond of silicon carbide, its high-temperature diffusion coefficient is very low. At a high temperature of 2100 ° C, the self-diffusion coefficients of C and Si are 1.5×10 -10 cm 2 / s and 2.5×10 -13 cm 2 / s, difficult to sinter into dense material

Method used

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  • High-thermal-conductivity silicon carbide material and preparation method thereof
  • High-thermal-conductivity silicon carbide material and preparation method thereof
  • High-thermal-conductivity silicon carbide material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A method for preparing a silicon carbide material with high thermal conductivity, comprising the following preparation steps:

[0041] S1, take each raw material by weight, including: silicon carbide 700g, diamond 80g, graphite powder 20g, water-soluble phenolic resin 100g, gelatin 20g, boron powder 15g and 75g silicon chip;

[0042] S2, putting each raw material in S1 into a ball mill, and adding 1500g of water to mix evenly to obtain a slurry;

[0043] S3, granulating the slurry in S2 through a spray drying process to obtain pellets;

[0044] S4, using a cold press, compressing the pellets in S3 under a pressure condition of 150MPa to obtain a green body;

[0045] S5. Bake and shape the green body in S4, place a silicon wafer above the green body during baking, and then process it;

[0046] S6. Vacuum sintering is carried out at a temperature of 1600° C., the heating rate is 4° C. / min, the holding time is 3 hours, and a silicon carbide material with high thermal con...

Embodiment 2-5

[0048] The preparation method of the high thermal conductivity silicon carbide material in Examples 2-5 is the same as that of Example 1, the only difference is that the raw material composition and dosage of the high thermal conductivity silicon carbide material are different, as shown in Table 1 and Table 2:

[0049] Table 1 Raw material composition and dosage of high thermal conductivity silicon carbide material in Examples 1-5

[0050]

[0051] Table 2 Parameters of the preparation method of high thermal conductivity silicon carbide material in Examples 1-5

[0052]

Embodiment 6

[0054] The preparation method of the high thermal conductivity silicon carbide material in this example is the same as that in Example 1, the only difference is that in S3, no silicon wafer is placed above the green body during baking and molding.

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Abstract

The invention relates to the field of mechanical sealing element materials, and particularly discloses a high-thermal-conductivity silicon carbide material and a preparation method thereof. The high-thermal-conductivity silicon carbide material consists of the following raw materials in parts by weight: 65-75 parts of silicon carbide, 3-10 parts of diamond, 18-22 parts of graphite powder, 1-5 parts of a binder, 2-10 parts of a sintering aid, 1-3 parts of boron powder and 5-15 parts of a silicon wafer. The preparation method comprises the following steps: S1, weighing the raw materials according to the formula proportion, adding water, and uniformly mixing to obtain slurry; s2, carrying out spray drying granulation on the slurry obtained in the step S1 to obtain particles; s3, carrying out compression molding on the particles in the S2 to obtain a biscuit; s4, baking and forming the biscuit in the S3, and then processing; and S5, performing vacuum sintering, and naturally cooling to obtain the high-thermal-conductivity silicon carbide material. The high-thermal-conductivity silicon carbide material can be used for preparing mechanical sealing rings and has good thermal conductivity.

Description

technical field [0001] This application relates to the field of mechanical seal materials, more specifically, it relates to a silicon carbide material with high thermal conductivity and a preparation method thereof. Background technique [0002] Silicon carbide is an ideal sealing material, with excellent chemical corrosion resistance, high mechanical strength, good wear resistance, high temperature resistance and self-lubricating properties, silicon carbide has a small friction coefficient and excellent thermal conductivity . As a high-temperature structural material, silicon carbide has been widely used in the fields of petroleum, chemical industry, machinery, military industry, shipbuilding, aerospace and automobiles, and can be widely used as a friction pair material for mechanical seals. [0003] However, due to the strong covalent bond of silicon carbide, its high-temperature diffusion coefficient is very low. At a high temperature of 2100 ° C, the self-diffusion coef...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/622C04B35/626C04B35/65
CPCC04B35/565C04B35/622C04B35/62695C04B35/65C04B2235/425C04B2235/427C04B2235/428C04B2235/421C04B2235/5436C04B2235/6562C04B2235/6567C04B2235/6581C04B2235/77C04B2235/96C04B2235/9607
Inventor 施汇周轩豪张敏飞
Owner 宁波市飞固密封科技有限公司
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