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Photosensitive resin, diluent composition for removing anti-reflection film, photosensitive resin using same, and method for removing anti-reflection film

A technology of photosensitive resin and anti-reflection film, which is applied in the processing of photosensitive materials, etc., can solve the problems of reduced usable area, uneven thickness, and reduced productivity, and achieve high operational stability, increase usable area, and increase productivity.

Pending Publication Date: 2021-06-11
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the diluent composition contains highly volatile methyl 3-methoxypropionate, so there are problems such as uneven thickness and edge cracking
In addition, in order to improve the solubility of highly polar photoresist and EBR (photoresist edge repair, Edge Bead Removal) characteristics, the existing diluent composition contains a highly polar composition, when the polarity is too high , the speed of photoresist swelling toward the center of the wafer at the end of the EBR becomes faster, and thus there is a problem that the peak height (Hump height) becomes higher
In addition, a high peak height will lead to a decrease in the usable area and problems such as an increase in the defect rate and a decrease in productivity due to the hump in the subsequent process, so it is urgent to solve these problems

Method used

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  • Photosensitive resin, diluent composition for removing anti-reflection film, photosensitive resin using same, and method for removing anti-reflection film
  • Photosensitive resin, diluent composition for removing anti-reflection film, photosensitive resin using same, and method for removing anti-reflection film
  • Photosensitive resin, diluent composition for removing anti-reflection film, photosensitive resin using same, and method for removing anti-reflection film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～12 and comparative example 1～18

[0079] Examples 1-12 and Comparative Examples 1-18: Preparation of diluent composition

[0080] In the mixing tank equipped with a stirrer, after adding each component with the weight % recorded in the following Table 1 and Table 2, stir at a speed of 500 rpm at room temperature for 1 hour to prepare Examples 1-12 and Comparative Examples 1-18 diluent composition.

[0081] 【Table 1】

[0082]

[0083]

[0084] 【Table 2】

[0085]

[0086]

[0087] a) Acetate

[0088] A: Propylene glycol monomethyl ether acetate

[0089] b) Cyclic ketones

[0090] B-1: Cyclopentanone

[0091] B-2: Cyclohexanone

[0092] c) propionate

[0093] C-1: Ethyl 3-ethoxypropionate (the compound of the following chemical formula 1-1)

[0094] [chemical formula 1-1]

[0095]

[0096] C-2: Ethyl 3-methoxypropionate (the compound of the following chemical formula 1-2)

[0097] [chemical formula 1-2]

[0098]

[0099] C-3: Methyl 3-methoxypropionate (compound of the following chemi...

experiment example

[0117] Experimental Example: Characteristic Evaluation of Diluent Composition

[0118] The properties of the diluent compositions described in Examples and Comparative Examples were evaluated using four types of photoresists (PR) in Table 3 below.

[0119] 【table 3】

[0120] distinguish Type of PR PR 1 Implanter with Krf PR PR 2 PR A for EUV PR 3 PR B for EUV PR 4 PR C for EUV

experiment example 1

[0121] Experiment 1: EBR (Edge Bead Removal) test

[0122] On an 8-inch silicon oxide substrate, the photosensitive resin composition described in Table 2 was coated with PR on the entire surface of the wafer under the evaluation conditions of Table 4 below, and Examples 1 to 12 were used respectively under the evaluation conditions of Table 4 below. And the thinner compositions of Comparative Examples 1 to 18 were subjected to an EBR test for removing unnecessary photosensitive films at edge portions.

[0123] The EBR test was carried out on four PRs. The diluent compositions of Examples 1 to 12 and Comparative Examples 1 to 18 were supplied at a constant pressure from a pressure tank equipped with a pressure gauge, and the diluent sprayed at a constant pressure was In the EBR process, the evaluation was performed under the condition that a total of 1.5 CC was injected. The evaluated substrates were magnified by 400 times and 1000 times through an optical microscope to deter...

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PUM

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Abstract

The invention provides a diluent composition. The diluent composition comprises the following components: a) C2-C4 alkylene glycol C1-C4 alkyl ether acetate; b) cyclopentanone; and c) a compound represented by a chemical formula. The invention also provides a photosensitive resin and an anti-reflection film removing method.

Description

technical field [0001] The present invention relates to a thinner composition for removing a photosensitive resin and an antireflection film used in the manufacturing process of a semiconductor element and a thin film transistor liquid crystal display element, and a method for removing the photosensitive resin and an antireflection film using the same. Background technique [0002] In the manufacturing process of semiconductor elements, the photolithography process is the operation of coating a photosensitive resin composition on a wafer and transferring a pre-designed pattern, and then passing through an appropriate etching process according to the transferred pattern to form an electronic circuit. It is one of the important processes. one. [0003] The photolithography process is carried out through the following steps: 1) coating process, uniformly coating the photosensitive resin composition on the wafer surface; 2) soft baking (soft baking) process, evaporating the solv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/32
CPCG03F7/32
Inventor 金圣植金正铉房淳洪金泰熙李荣宰
Owner DONGWOO FINE CHEM CO LTD