A nitrogen-containing compound and its organic electroluminescent device
An electroluminescent device, nitrogen compound technology, applied in the direction of electro-solid device, silicon organic compound, heterocyclic compound isotope introduction, etc., to achieve the effect of good hole blocking performance, good light extraction function and low voltage
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preparation example Construction
[0271] The preparation of the device adopts a vacuum evaporation system, and the continuous evaporation preparation is completed under the condition of continuous vacuum. The materials used are in different evaporation source quartz crucibles, and the temperature of the evaporation source can be controlled separately. The thermal evaporation rate of organic materials or doped parent organic materials is generally set at 0.1nm / s, and the evaporation rate of doped materials is adjusted according to the doping ratio; the evaporation rate of electrode metals is 0.4-0.6nm / s. Place the processed glass substrate into the OLED vacuum coating machine. During the thin film production process, the vacuum degree of the system should be maintained at 5×10 -5 Below Pa, the organic layer and the metal electrode are evaporated separately by replacing the mask plate, and the evaporation speed is detected by Inficon's SQM160 quartz crystal film thickness detector, and the film thickness is dete...
Embodiment 1
[0273] Embodiment 1: Preparation of organic electroluminescent device 1
[0274] Thermally evaporated HI-1:HI-2=4:96 on ITO / Ag / ITO as a hole injection layer with a thickness of 10nm; thermally evaporated HT on the hole injection layer as a hole transport layer with a thickness of 80nm On the hole transport layer thermally evaporated BD:BH=5:95 as the light-emitting layer, with a thickness of 20nm; on the light-emitting layer, thermally evaporated compound 1 of the present invention as the hole blocking layer, with a thickness of 5nm; Thermally evaporated TmPyPB on the barrier layer as the electron transport layer with a thickness of 35nm; thermally evaporated LiF on the electron transport layer as the electron injection layer with a thickness of 1.2nm; thermally evaporated Mg:Ag=90:10 on the electron injection layer As a cathode, the thickness is 14nm; CP-1 is thermally evaporated on the cathode as a covering layer, and the thickness is 60nm.
Embodiment 2～12
[0275] Examples 2-12: Preparation of Organic Electroluminescent Devices 2-12
[0276] Compound 1 in the hole blocking layer of Example 1 was replaced by Compound 14, Compound 56, Compound 61, Compound 68, Compound 81, Compound 86, Compound 102, Compound 143, Compound 156, Compound 180, Compound 189, and other steps Similarly, organic electroluminescent devices 2-12 were obtained.
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