Silicon oxide composite boron-doped carbon nanotube film as well as preparation method and application thereof

A carbon nanotube film, boron doping technology, applied in the direction of carbon nanotubes, nanocarbon, gaseous chemical plating, etc., can solve the problem that boron-doped carbon nanotube materials cannot meet the flexible film electrodes and other problems, and achieve self-supporting Good, simple process flow, improved electrochemical performance

Pending Publication Date: 2021-06-22
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a silicon oxide composite boron-doped carbon nanotube film, which has good high electrochemical performance

Method used

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  • Silicon oxide composite boron-doped carbon nanotube film as well as preparation method and application thereof
  • Silicon oxide composite boron-doped carbon nanotube film as well as preparation method and application thereof
  • Silicon oxide composite boron-doped carbon nanotube film as well as preparation method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) Completely seal the vertical CVD furnace, continuously feed 100 sccm of Ar to remove the air in the furnace, then raise the temperature of the vertical CVD furnace to 1150° C. through the temperature controller, and keep it warm for 4 hours to prepare the carbon nanotube-based substrate for subsequent carbon nanotubes. The growth of the composite film provides a constant temperature environment;

[0033] (2) Weigh ethanol, ferrocene, thiophene according to the mass ratio of 95:1.5:1, be mixed into solution, wherein ethanol is as carbon source, ferrocene is as catalyst, and thiophene is as promotor; Then on the basis of above-mentioned mixed solution Add 2wt.% boric acid and 0.2wt.% tetraethyl orthosilicate as the boron source and silicon source respectively, and disperse the above solution by ultrasonic for 10min at a temperature of 50°C to obtain a uniform dispersion and then transfer to a syringe as a precursor solution;

[0034] (3) After steps (1) and (2) are c...

Embodiment 2

[0037] (1) Completely seal the vertical CVD furnace, continuously feed 100 sccm of Ar to remove the air in the furnace, then raise the temperature of the vertical CVD furnace to 1150° C. through the temperature controller, and keep it warm for 4 hours to prepare the carbon nanotube-based substrate for subsequent carbon nanotubes. The growth of the composite film provides a constant temperature environment;

[0038] (2) Weigh ethanol, ferrocene, thiophene according to the mass ratio of 95:1.5:1, be mixed into solution, wherein ethanol is as carbon source, ferrocene is as catalyst, and thiophene is as promotor; Then on the basis of above-mentioned mixed solution Add 2wt.% boric acid and 0.5wt.% tetraethyl orthosilicate as the boron source and silicon source respectively, and disperse the above solution by ultrasonic for 10min at a temperature of 50°C to obtain a uniform dispersion and then transfer to a syringe as a precursor solution;

[0039] (3) After steps (1) and (2) are c...

Embodiment 3

[0042] (1) Completely seal the vertical CVD furnace, continuously feed 100 sccm of Ar to remove the air in the furnace, then raise the temperature of the vertical CVD furnace to 1150° C. through the temperature controller, and keep it warm for 4 hours to prepare the carbon nanotube-based substrate for subsequent carbon nanotubes. The growth of the composite film provides a constant temperature environment;

[0043] (2) Weigh ethanol, ferrocene, thiophene according to the mass ratio of 95:1.5:1, be mixed into solution, wherein ethanol is as carbon source, ferrocene is as catalyst, and thiophene is as promotor; Then on the basis of above-mentioned mixed solution Add 2wt.% boric acid and 1wt.% tetraethyl orthosilicate as boron source and silicon source respectively, and disperse the above solution by ultrasonic for 10min at a temperature of 50°C to obtain a uniform dispersion and transfer it to Syringes, as precursor solutions;

[0044] (3) After steps (1) and (2) are completed,...

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Abstract

The invention discloses a silicon oxide composite boron-doped carbon nanotube film and a preparation method and application thereof, and the preparation method comprises the following steps: 1, completely sealing a vertical CVD furnace, continuously introducing Ar, heating the vertical CVD furnace to 1100-1200 DEG C, and carrying out heat preservation; 2, weighing ethanol, ferrocene and thiophene according to a mass ratio of 95:1.5:1, and mixing to obtain a mixed solution; adding 1-3wt.%, preferably 2wt.%, of boric acid as a boron source for reaction and 0.2-1wt.% of ethyl orthosilicate as a silicon source for reaction into the mixed solution, uniformly dispersing, and transferring to a microsyringe at the top end of the vertical CVD furnace as a precursor solution; and 3, closing Ar, continuously introducing 600-1000 sccm of H2 as a reaction gas, injecting the precursor solution into a vertical CVD furnace by an injection pump through an ultrasonic atomization device at the top of the vertical CVD furnace, and obtaining the silicon oxide composite boron-doped carbon nanotube film 5-10 minutes after the reaction is started. The silicon oxide composite boron-doped carbon nanotube film obtained by the invention has high electrochemical performance.

Description

technical field [0001] The invention relates to the technical field of composite materials, in particular to a silicon oxide composite boron-doped carbon nanotube film and its preparation method and application. Background technique [0002] With the increasing demand for thin-film batteries and other forms of flexible electronic devices, lightweight, flexible, free-standing self-supporting electrodes have gradually attracted attention and research as their important structural basis. As a typical carbon anode material for lithium-ion batteries, carbon nanotubes have high specific surface area and unique electronic structure. Doping carbon nanotubes with heteroatoms (boron, nitrogen, phosphorus, etc.) can further improve their electrochemical performance. Among them, boron doping can effectively improve the electrical conductivity and structural stability of carbon nanotubes, and can also enhance the mechanical properties of carbon nanotubes such as flexibility. However, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/583H01M4/62H01M10/0525C01B32/158C23C16/26C23C16/30C23C16/44
CPCH01M4/362H01M4/583H01M4/625H01M10/0525C01B32/158C23C16/26C23C16/30C23C16/44Y02E60/10
Inventor 侯峰王磊
Owner TIANJIN UNIV
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