Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Grinding pad for chemical mechanical grinding and preparation method thereof

A chemical-mechanical and abrasive pad technology, applied in the direction of abrasive tools, etc., can solve the problems of insufficient flatness and uneven surface, and achieve the effect of soft texture, strong wear resistance and good flexibility

Pending Publication Date: 2021-06-25
普利英(重庆)创新科技有限公司
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the above-mentioned technical deficiencies, the object of the present invention is to provide a polishing pad for chemical mechanical polishing and a preparation method thereof. The present invention modifies polyurethane, and forms a composite of polyurethane and polyurethane prepolymer Material, through the blending of polyurethane prepolymer resin to achieve the purpose of improving the performance of polyurethane, prolong the service life and delay the "glazing" of polishing, and increase wear resistance; at the same time, the polishing pad is designed to overcome the wear and tear of the polished surface Surface unevenness and insufficient planarity, resulting in a modified pad that ensures a more uniform removal rate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A preparation method for a polishing pad for chemical mechanical polishing, comprising the steps of:

[0031] (1) Weighing: Weigh raw materials according to the following parts by weight: 50 parts of polyurethane prepolymer resin; 70 parts of ethylene glycol; 50 parts of propylene-1,2-diisocyanate; 15 parts of glass microspheres ; 5 parts of 3,3'-dichloro-4,4'-diphenylmethanediamine, set aside;

[0032] (2) Preparation of polyurethane prepolymer resin:

[0033] Weighing: Weigh raw materials according to the following parts by weight: 17 parts of polymethylene polyphenyl polyisocyanate; 26 parts of diphenylmethane-4,4'-diisocyanate; isocyanate polymethylene polyphenylene 32 parts of ester and α-hydrogen-ω-hydroxyl poly, set aside;

[0034] Preparation of polyurethane prepolymer resin: polymethylene polyphenyl polyisocyanate, diphenylmethane-4,4'-diisocyanate and polymethylene polyphenylene isocyanate with α- Hydrogen-omega-hydroxyl polymers were mixed uniformly at 45°...

Embodiment 2

[0040] A preparation method for a polishing pad for chemical mechanical polishing, comprising the steps of:

[0041] (1) Weighing: Weigh raw materials according to the following parts by weight: 70 parts of polyurethane prepolymer resin; 60 parts of glycerol; 40 parts of diphenylmethane diisocyanate; 10 parts of polymer beads; -15 parts of dimethylthiotoluenediamine, standby;

[0042] (2) Preparation of polyurethane prepolymer resin:

[0043] Weighing: Weigh raw materials according to the following parts by weight: 20 parts of polymethylene polyphenyl polyisocyanate; 25 parts of diphenylmethane-4,4'-diisocyanate; isocyanate polymethylene polyphenylene 40 parts of ester and α-hydrogen-ω-hydroxyl poly, set aside;

[0044] Preparation of polyurethane prepolymer resin: polymethylene polyphenyl polyisocyanate, diphenylmethane-4,4'-diisocyanate and polymethylene polyphenylene isocyanate with α- Hydrogen-omega-hydroxyl polymers were mixed uniformly at 50°C to obtain polyurethane p...

Embodiment 3

[0050] A preparation method for a polishing pad for chemical mechanical polishing, comprising the steps of:

[0051] (1) Weighing: Weigh the raw materials according to the following parts by weight: 90 parts of polyurethane prepolymer resin; 30 parts of neopentyl glycol; 20 parts of cyclohexane-1,4-diisocyanate; glass beads 1 Parts; 30 parts of 4,4'-methylene bis(2,6-diisopropyl)aniline, for subsequent use;

[0052] (2) Preparation of polyurethane prepolymer resin:

[0053] Weighing: Weigh raw materials according to the following parts by weight: 30 parts of polymethylene polyphenyl polyisocyanate; 26 parts of diphenylmethane-4,4'-diisocyanate; isocyanate polymethylene polyphenylene 34 parts of ester and α-hydrogen-ω-hydroxyl poly, set aside;

[0054] Preparation of polyurethane prepolymer resin: polymethylene polyphenyl polyisocyanate, diphenylmethane-4,4'-diisocyanate and polymethylene polyphenylene isocyanate with α- Hydrogen-omega-hydroxyl polymers were mixed uniformly ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of semiconductors, and in particular, relates to a grinding pad for chemical mechanical grinding and a preparation method thereof, wherein the grinding pad is prepared from the following raw materials in parts by weight: 50-90 parts of polyurethane prepolymer resin, 30-70 parts of polyol, 20-50 parts of diisocyanate, 1-15 parts of a filler, and 5-30 parts of a curing agent. Polyurethane is modified, polyurethane and a polyurethane prepolymer form a composite material, the purpose of improving the performance of polyurethane is achieved through blending of polyurethane prepolymer resin, the service life is prolonged, glazing of grinding is delayed, and the wear resistance is improved; and meanwhile, the grinding pad is designed, the problems that the surface of the ground surface is not uniform and the flatness is insufficient are solved, and thus the modified grinding pad capable of guaranteeing the more balanced cutting rate can be manufactured.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a polishing pad for chemical mechanical polishing and a preparation method thereof. Background technique [0002] Chemical mechanical polishing technology is to use chemical corrosion and mechanical force to smooth the silicon wafer or other substrate materials during processing by organically combining the mechanical grinding of abrasive grains with the chemical action of oxidizing agents to complete the chemical reaction on the surface of polished parts. It is mainly used for the processing of ultra-precision surfaces (such as silicon wafers, micro-integrated circuits, memories, etc.). [0003] The method of using the polishing pad is as follows: fix the silicon wafer at the bottom of the polishing head, place the polishing pad on the grinding disc, and when polishing, the rotating polishing head presses against the rotating polishing pad with a certain pressure, by subm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08G18/76C08G18/32C08K7/20B24B37/24
CPCC08G18/7664C08G18/7671C08G18/3206C08G18/3814C08K7/20B24B37/24
Inventor 贺锦军卢永祥王杰男其他发明人请求不公开姓名
Owner 普利英(重庆)创新科技有限公司
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com