Check patentability & draft patents in minutes with Patsnap Eureka AI!

Preparation method of metal material three-dimensional microstructure based on electromigration

A metal material, electromigration technology, applied in the direction of metal material coating process, microstructure technology, microstructure device, etc., can solve the problems such as difficult to prepare shape semiconductor and three-dimensional microstructure of metal material, so as to reduce the preparation cost and experiment difficulty , high efficiency and simple operation

Active Publication Date: 2021-06-29
JIAXING UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the rapid development of microelectromechanical systems (MEMS) in the fields of consumer electronics, aerospace, and biomedicine, the preparation method of three-dimensional microstructures of metal materials has become one of the hot researches today. Many domestic and foreign scientists have carried out related work, including The curling and folding of the material based on the residual stress, the film is rolled into a tube structure, or the helical photoelectric material is fabricated by using the laser direct writing technology, or the microstructure is prepared based on the buckling phenomenon, but these technologies are limited by the material and the geometric size. Limitations, it is difficult to prepare three-dimensional microstructures of semiconductor and metal materials with complex shapes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of metal material three-dimensional microstructure based on electromigration
  • Preparation method of metal material three-dimensional microstructure based on electromigration
  • Preparation method of metal material three-dimensional microstructure based on electromigration

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0021] Taking the metal material aluminum as an example, the steps to prepare the three-dimensional microstructure of aluminum are as follows:

[0022] 1) if figure 1 As shown, the PI material is used as the substrate, and the two-dimensional sample structure PI / TiN / metal material / TiN is designed, and the surface TiN is the protective layer and also serves as the electrode. The underlying TiN is an adhesive layer. In order to better adhere to the metal material, the metal material can be aluminum, silver, copper, etc. In this embodiment, aluminum is taken as an example, so the structure of the two-dimensional sample is PI / TiN / Al / TiN. The electromigration preparation technology can produce aluminum micron wires, aluminum micron strips or aluminum micron tubes of different sizes in a single sample. Proceedings 2010 "Preparation of Aluminum Micro-nanowire...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a preparation method of a metal material three-dimensional microstructure based on electromigration. Different sample combinations can be designed according to different three-dimensional models, limitation of materials and geometric dimensions is avoided, semiconductor and metal material three-dimensional microstructures with complex shapes are prepared, and micron structures are manufactured based on electromigration. And then paper cutting, folding and Joule heat welding technologies are combined, the preparation cost and the experiment difficulty are remarkably reduced, metal microstructure preparation is achieved, operation is easy, efficiency is high, and the method is suitable for metal materials such as silver, copper and aluminum.

Description

technical field [0001] The invention relates to the field of metal micro-material preparation, in particular to a method for preparing a three-dimensional microstructure of metal materials based on electromigration. Background technique [0002] With the rapid development of microelectromechanical systems (MEMS) in the fields of consumer electronics, aerospace, and biomedicine, the preparation method of three-dimensional microstructures of metal materials has become one of the hot researches today. Many domestic and foreign scientists have carried out related work, including The curling and folding of the material based on the residual stress, the film is rolled into a tube structure, or the helical photoelectric material is fabricated by using the laser direct writing technology, or the microstructure is prepared based on the buckling phenomenon, but these technologies are limited by the material and the geometric size. However, it is difficult to prepare three-dimensional ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B81C1/00B81B7/02
CPCB81C1/00436B81B7/02Y02P10/25
Inventor 鹿业波孙权谢林涛王嘉炜杨润洪
Owner JIAXING UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com