Composite material, preparation method thereof and quantum dot light-emitting diode
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TCL CORPORATION
- Publication Date
- 2021-07-16
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Abstract
Description
technical field
[0001] The invention relates to the field of quantum dot light emitting devices, in particular to a composite material, a preparation method thereof and a quantum dot light emitting diode. Background technique
[0002] Quantum dots (QDs) have significant advantages in the field of luminescent materials due to their own superior photoelectric properties. In order to explore the potential application of quantum dot films in solid-state fluorescence and display, the preparation of ultra-thin quantum dot films with excellent optical properties has become a research hotspot for many researchers.
[0003] Since the particle size of quantum dots is generally between 1 and 10 nm, it has a very large specific surface area, and the increase in the number of atoms on the surface leads to insufficient coordination of surface atoms, unsaturated bonds and dangling bonds (that is, unsaturated bonds on the surface of the crystal lattice). Paired electrons) increase, making ...