Wet etching process modeling method and manufacturing method of semiconductor device

Abstract

The invention provides a wet etching process modeling method and a manufacturing method of a semiconductor device. The wet etching process modeling method comprises the following steps: establishing a partial differential equation of a reaction diffusion system in a chemical reaction of wet etching of a wafer surface with a mixed acid solution; applying the Bruxel model to a chemical reaction function in the partial differential equation to obtain a formula of the chemical reaction function; performing linear expansion on the formula of the chemical reaction function to determine the condition of chemical oscillation in the chemical reaction, and calculating simulation parameters in the formula of the chemical reaction function; and determining a diffusion coefficient in a spatial diffusion term when the concave spherical surface microstructure appears so as to obtain a mathematical model of a reaction diffusion system in a chemical reaction of the wet etching wafer surface. According to the technical scheme provided by the invention, the optimal proportion of the mixed acid solution can be quickly and accurately obtained, so that the concave spherical microstructure with the optimal morphology is formed on the surface of the etched wafer, and the performance of the semiconductor device is further improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a wet etching process modeling method and a semiconductor device manufacturing method. Background technique [0002] In the process of semiconductor device processing, wet etching process, as a basic and key technology, has been widely used in actual production. Wet etching generally uses liquid chemical reagents (generally mixed acids) to react with areas not protected by photoresist on the surface of the wafer to form a specific structure after leveling, exposure, and development, and then passes through the glue removal machine. Remove the photoresist on the surface, then wash off the excess residue in the cleaning machine, and then send it to the next station. One of the characteristics of wet etching is that liquid chemical reagents are isotropic when they react; at the same time, liquid chemical reagents have high etching selectivity, low cost, and can be ma...

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Problems solved by technology

[0004] However, due to the complexity of the reaction mechanism between the mixed acid and the substrate, it is difficult to find the optimal mixed acid ratio through experimental design.

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