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Preparation method of indium tin oxide film pattern

A technology of indium tin oxide and thin film patterning, which is applied in the field of manufacturing, can solve the problems of ITO thin film resistance, irregular edges, over-etching, etc., and achieve the effect of solving uneven patterns, reducing preparation costs, and uniform patterns

Pending Publication Date: 2021-07-16
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, wet etching, dry etching, or laser etching are mainly used to obtain patterned ITO thin films. They are all patterned first, then annealed on the ITO thin film, and etched first, which is prone to occurrence. The problem of over-etching, uneven etching, and irregular edges makes the ITO film have amorphous components, which makes the resistance of the ITO film larger

Method used

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  • Preparation method of indium tin oxide film pattern
  • Preparation method of indium tin oxide film pattern
  • Preparation method of indium tin oxide film pattern

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] figure 1 The flow chart of the preparation of an indium tin oxide thin film pattern provided by Embodiment 1 of the present invention, this embodiment is applicable to the preparation of an indium tin oxide thin film pattern, see figure 1 , the preparation method of indium tin oxide film pattern comprises:

[0042] S110, providing a substrate.

[0043] Specifically, the substrate has the function of supporting and fixing, and the substrate can be a hard substrate, such as ordinary alkali glass, alkali-free glass, quartz glass or silicon substrate, etc., or a flexible substrate, such as polyimide (Polyimide, PI) Substrate, polyethylene naphthalate (PEN) substrate, polyethylene terephthalate (PET) substrate, polyethersulfone resin (PES) substrate, polycarbonate (PC) substrate or ultra-thin glass, etc. , the specific substrate can be selected according to the actual situation, for example, it can be selected according to the reliability of the substrate and the film laye...

Embodiment 2

[0055] figure 2 A flow chart for the preparation of an indium tin oxide thin film pattern provided by Embodiment 2 of the present invention. This embodiment is applicable to the preparation of an indium tin oxide thin film pattern. Optionally, see figure 2 , the preparation method of indium tin oxide film pattern comprises:

[0056] S210, providing a substrate.

[0057] S220, forming an indium tin oxide thin film on the surface of the substrate.

[0058] S230, performing crystallization treatment on the indium tin oxide thin film.

[0059] Specifically, the indium tin oxide thin film is crystallized to make the indium tin oxide thin film crystallize. Compared with the amorphous indium tin oxide thin film, the mechanical strength of each part of the indium tin oxide thin film after crystallization is more uniform. Improve, so that the film has a uniform etching rate in each area in the subsequent patterned etching, and provide a guarantee for the regular edge etching morph...

Embodiment 3

[0063] image 3 A flow chart for the preparation of an indium tin oxide thin film pattern provided by Embodiment 3 of the present invention. This embodiment is applicable to the preparation of an indium tin oxide thin film pattern. Optionally, see image 3 , the preparation method of indium tin oxide film pattern comprises:

[0064] S310, providing a substrate.

[0065] S320, forming an indium tin oxide thin film on the surface of the substrate.

[0066] S330, performing planarization treatment on the ITO thin film.

[0067] Specifically, after the indium tin oxide film is formed on the substrate, the indium tin oxide film is planarized to remove the burrs of the indium tin oxide film and reduce the roughness of the indium tin oxide film, so that the indium tin oxide film can be made The crystallization of the thin film is more uniform, fully crystallized, and the existence of amorphous structure is avoided.

[0068] Optionally, S330, performing planarization treatment on ...

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Abstract

The invention discloses a preparation method of an indium tin oxide film pattern. The preparation method of the indium tin oxide film pattern comprises the following steps of: providing a substrate; forming an indium tin oxide film on the surface of the substrate; carrying out homogenization treatment on the indium tin oxide thin film; and carrying out patterning etching on the indium tin oxide thin film. According to the method, the effect of preparing the low-resistance and high-precision indium tin oxide film pattern is achieved.

Description

technical field [0001] The embodiments of the present invention relate to the field of manufacturing technology, in particular to a method for preparing an indium tin oxide thin film pattern. Background technique [0002] Indium Tin Oxide (ITO) thin films have excellent electrical conductivity and visible light transmittance, and are widely used in optoelectronic devices, such as touch screens, sensors, displays, and solar energy. [0003] At present, wet etching, dry etching, or laser etching are mainly used to obtain patterned ITO thin films. They are all patterned first, then annealed on the ITO thin film, and etched first, which is prone to occurrence. The problems of over-etching, uneven etching, and irregular edges make the ITO thin film have amorphous components, which makes the resistance of the ITO thin film larger. Contents of the invention [0004] The invention provides a method for preparing an indium tin oxide thin film pattern, so as to realize the preparat...

Claims

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Application Information

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IPC IPC(8): H01L21/321H01L21/3213H01L21/324
CPCH01L21/321H01L21/32115H01L21/3213H01L21/324
Inventor 彭俊彪朱宇博徐华徐苗李民
Owner SOUTH CHINA UNIV OF TECH
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