Monocrystalline silicon growth control process

Abstract

The invention relates to a monocrystalline silicon growth control process which comprises the following steps: S1, erecting a magnetic field device on the outer side of a furnace barrel of a single crystal furnace, and applying a magnetic field into the furnace barrel; s2, loading materials; s21, arranging a coaxial alignment device in the furnace barrel, installing a graphite crucible in the furnace barrel, and installing a quartz crucible in the graphite crucible through the coaxial alignment device; s22, putting the polycrystal into a quartz crucible, wherein edges and corners are close to the quartz crucible; s3, installing and adjusting the seed crystal through a coaxial alignment device, wherein the seed crystal and the quartz crucible are coaxial; s4, vacuumizing and leakage detection are conducted, gas in the furnace barrel is pumped out, and after gas pumping is completed, the gas leakage rate of the furnace barrel is detected; s5, melting the materials; s6, seeding, shouldering and ending; s7, blowing out the furnace; and S8, taking the single crystal. The process has the effects of quickly and accurately adjusting the coaxiality of the graphite crucible, the quartz crucible and the seed crystal and improving the production efficiency and quality of monocrystalline silicon.

Description

technical field [0001] This application relates to the field of monocrystalline silicon production, in particular to a monocrystalline silicon growth control process. Background technique [0002] Silicon is the most common and widely used semiconductor material. Elemental silicon is melted through a single crystal furnace and arranged in a diamond lattice to form crystal nuclei. The crystal nuclei grow into grains with the same crystal plane orientation to form single crystal silicon. As a relatively active non-metal element crystal, monocrystalline silicon is an important part of crystalline materials and is at the forefront of new material development. Its main uses are as semiconductor materials and the use of solar photovoltaic power generation and heating. [0003] The Chinese patent with the publication number CN108823636A discloses a single crystal silicon growth device, which is to arrange a graphite crucible inside a graphite heater for heating, arrange a quartz cr...

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Problems solved by technology

[0004] In view of the related technologies mentioned above, the inventor believes that when the graphite crucible and the quartz crucible are installed, they need to be in a coaxial state, and the axes of the graphite crucible and the quartz crucible coincide with the rotation axis of the seed crystal. The calibration work during the installation process is cumbersome, and may Low coaxiality affects the production efficiency and production quality of monocrystalline silicon

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