Sodium bismuth titanate-based lead-free piezoelectric film and preparation method thereof

A lead-free piezoelectric, bismuth sodium titanate-based technology, applied in the field of bismuth sodium titanate-based lead-free piezoelectric thin film and its preparation, can solve the problems of restricting wide application, low leakage current, etc., and achieve smooth surface, Effect of high polarization strength and excellent piezoelectric performance

Active Publication Date: 2021-08-06
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, BiFeO 3 The large leakage current of the thin film at room temperature limits its wide application
(Mn, Ti) co-doped Bi(Fe 0.95 mn 0.03 Ti 0.02 )O 3 The thin film not only has good ferroelectri

Method used

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  • Sodium bismuth titanate-based lead-free piezoelectric film and preparation method thereof
  • Sodium bismuth titanate-based lead-free piezoelectric film and preparation method thereof
  • Sodium bismuth titanate-based lead-free piezoelectric film and preparation method thereof

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preparation example Construction

[0024] A preparation method of sodium bismuth titanate-based lead-free piezoelectric film, comprising the steps of:

[0025] Step 1, adding bismuth nitrate, sodium acetate, and strontium acetate into the solvent, and stirring to obtain solution A;

[0026] Step 2, dissolving acetylacetone, tetrabutyl titanate, ferric nitrate nonahydrate and manganese acetate tetrahydrate in a solvent, stirring and heating to obtain solution B;

[0027] Step 3, mixing solution A and solution B, and obtaining mixed solution C after pretreatment; and step 4, coating mixed solution C on the treated substrate by spin coating, and after high temperature treatment, sodium bismuth titanate is obtained based lead-free piezoelectric film.

Embodiment 1

[0030] A preparation method of sodium bismuth titanate-based lead-free piezoelectric film, comprising the steps of:

[0031] Step 1, 3.9746 grams of bismuth nitrate, 1.0735 grams of sodium acetate, and 1.2270 grams of strontium acetate were dissolved in 40 milliliters of acetic acid, and stirred at 50° C. for 20 minutes to prepare solution A.

[0032] Step 2, dissolve 4.0452 g of acetylacetone, 6.8086 g of tetrabutyl titanate, 0.0767 g of iron (III) nitrate nonahydrate, and 0.0025 g of manganese acetate (II) tetrahydrate in 10 ml of ethylene glycol methyl ether, and heat to 50°C and stirred for 20 minutes to prepare solution B.

[0033]Step 3: Mix solution A and solution B, add ammonia water to adjust the pH value until the solute is completely dissolved, add acetic acid to adjust the concentration to 0.25 mol / L, and stir at 50°C for 300 minutes to prepare mixed solution C.

[0034] In step 4, the mixed solution C is coated on the treated substrate by spin coating, and after ...

Embodiment 2

[0042] A preparation method of sodium bismuth titanate-based lead-free piezoelectric film, comprising the steps of:

[0043] Step 1, 4.0018 grams of bismuth nitrate, 1.0660 grams of sodium acetate, and 1.2270 grams of strontium acetate were dissolved in 40 milliliters of acetic acid, and stirred at 50° C. for 20 minutes to prepare solution A.

[0044] Step 2, dissolve 4.0452 g of acetylacetone, 6.7749 g of tetrabutyl titanate, 0.1150 g of iron (III) nitrate nonahydrate, and 0.0037 g of manganese acetate (II) tetrahydrate in 10 ml of ethylene glycol methyl ether, and heat to 50°C and stirred for 20 minutes to prepare solution B.

[0045] Step 3: Mix solution A and solution B, add ammonia water to adjust the pH value until the solute is completely dissolved, add acetic acid to adjust the concentration to 0.25 mol / L, and stir at 50°C for 300 minutes to prepare mixed solution C.

[0046] In step 4, the mixed solution C is coated on the treated substrate by spin coating, and after...

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Abstract

The invention relates to a sodium bismuth titanate-based lead-free piezoelectric film and a preparation method thereof, and belongs to the field of electronic functional materials and devices. The preparation method provided by the invention comprises the following steps: step 1, adding bismuth nitrate, sodium acetate and strontium acetate into a solvent, and stirring to obtain a solution A; step 2, dissolving acetylacetone, tetrabutyl titanate, ferric nitrate nonahydrate and manganese acetate tetrahydrate in a solvent, stirring and heating to obtain a solution B; step 3, mixing the solution A with the solution B, and performing pretreatment to obtain a mixed solution C; and step 4, coating a treated substrate with the mixed solution C by using a spin coating method, and performing high-temperature treatment to obtain the (0.72-x)(Bi0. 5Na0. 5) TiO3-0. 28SrTiO3-xBi (Fe0. 95Mn0.03Ti0.02)O3 ternary system sodium bismuth titanate-based lead-free piezoelectric film. Therefore, the piezoelectric film prepared by the method is flat and smooth in surface, has a typical perovskite structure, relatively high polarization intensity and excellent piezoelectric performance; and meanwhile, the inverse piezoelectric coefficient can reach 179.7 picometer/volt to the maximum, and the method has very important significance for developing a high-performance lead-free piezoelectric film.

Description

technical field [0001] The invention relates to the field of electronic functional materials and devices, in particular to a bismuth sodium titanate-based lead-free piezoelectric film and a preparation method thereof. Background technique [0002] The reason why piezoelectric thin film materials have rapidly become a hot field in the scientific community since the beginning of research is mainly because of their excellent comprehensive properties such as ferroelectricity, piezoelectricity and electro-optic, and can be widely used in microelectromechanical systems (MEMS). Realize energy conversion, driving, sensing and other functions. Compared with piezoelectric ceramics, piezoelectric film materials have the advantages of lower driving voltage (generally 3-5V voltage is enough to make it work), large induction force, good driving range, and wide operating frequency range . However, most piezoelectric thin film devices currently on the market are based on lead-based piezoe...

Claims

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Application Information

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IPC IPC(8): C04B35/475C04B35/622
CPCC04B35/475C04B35/62222C04B2235/443C04B2235/48C04B2235/449C04B2235/96
Inventor 沈波朱坤翟继卫
Owner TONGJI UNIV
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