Unlock instant, AI-driven research and patent intelligence for your innovation.

Quantum dot light-emitting diode device, preparation method thereof and display panel

A quantum dot light-emitting and diode technology, applied in the field of quantum dots, can solve the problems of high cost and unsuitable for large-area preparation, and achieve the effects of long service life, suitable for large-area preparation, and stable performance

Inactive Publication Date: 2021-08-06
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cost of evaporation method is relatively high, and it is not suitable for large-scale preparation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot light-emitting diode device, preparation method thereof and display panel
  • Quantum dot light-emitting diode device, preparation method thereof and display panel
  • Quantum dot light-emitting diode device, preparation method thereof and display panel

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0024] An embodiment of the present invention provides a method for preparing a quantum dot light-emitting diode device, comprising:

[0025] A substrate is provided, and a cathode, a light-emitting layer, a hole transport layer, and an anode are formed stacked on the substrate, and the material of the hole transport layer is a second hole transport material, wherein the step of forming the light-emitting layer includes :

[0026] S1, depositing a mixed material comprising a first hole transport material and quantum dots on the cathode or on the hole transport layer, the first hole transport material comprising a crosslinking functional group;

[0027] S2, heating the mixed material to make the first hole transport material form a cross-linked polymer to obtain the light emitting layer.

[0028] The preparation method of the quantum dot light-emitting diode device provided by the embodiment of the present invention uses a mixed material of quantum dots and a first hole transp...

Embodiment 1

[0080] 1. Provide the substrate deposited with the first electrode: the first electrode material is ITO, place the glass substrate deposited with ITO in detergent, deionized water, acetone, ethanol, and deionized water in sequence for 15 minutes each time, and then 100 ° C Dry, and finally UV light for 15min.

[0081] 2. Depositing the first functional layer on the first electrode: A 50nm MgZnO thin film was obtained by spin coating on the ITO, annealed at 100° C. for 10 minutes, and the doping ratio of Mg was 5%.

[0082] 3. Form a luminescent material coating on the first functional layer: Spin-coat a mixed solution of quantum dots and CBP-H (compound 07) on the MgZnO film as a luminescent layer, wherein the concentration of quantum dots is 15mg / mL, CBP-H The concentration is 2mg / mL, the solvent is toluene, and annealed at 140°C for 30min.

[0083] 4. Deposit a hole transport layer, a hole injection layer and a second electrode in sequence on the light-emitting layer to mak...

Embodiment 2

[0088] Compound 01 was used to replace CBP-H to prepare a QLED device, and other conditions were the same as the preparation method of Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a quantum dot light-emitting diode device. The device comprises a cathode, an anode, a light-emitting layer and a hole transport layer; the cathode and the anode are oppositely arranged; the light-emitting layer is arranged between the cathode and the anode; the material of the light-emitting layer comprises a cross-linked polymer formed by a first hole transport material and quantum dots embedded in the cross-linked polymer; and the hole transport layer is arranged between the light-emitting layer and the anode, and the material of the hole transport layer is a second hole transport material. The invention also relates to a preparation method of the quantum dot light-emitting diode device and a display panel.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a quantum dot light-emitting diode device, a preparation method thereof, and a display panel. Background technique [0002] Quantum Dots (Quantum Dots) are nanocrystals with a radius smaller than or close to the radius of the exciton Bohr, and its particle size is usually between 1 and 20 nm. Quantum dots used in the display field generally have a core-shell structure, the movement of holes and electrons in the interior is restricted in all directions, and the surface is generally passivated by ligands. Quantum dots have been widely used in the field of light-emitting displays due to their luminescent wavelength can be adjusted by controlling the particle size, narrow luminous spectrum linewidth, high color purity, high electron mobility, good light stability, and can be used for flexible displays. [0003] A light-emitting diode using quantum dots as a light-emitting mater...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/12H10K85/111H10K85/615H10K85/633H10K85/6572H10K50/115H10K50/156
Inventor 龚浩天庄锦勇
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD