Data measurement method for polycrystalline silicon layer in TOPCon passivation contact structure

Abstract

A data measurement method for a polycrystalline silicon layer in a TOPCon passivation contact structure comprises the following steps that S1, a use product and a measurement product with the TOPCon passivation contact structure are prepared under the same process condition, a dielectric layer is additionally arranged on the measurement product, the use product comprises a tunneling oxide layer and a polycrystalline silicon layer which are sequentially located on a crystalline silicon substrate from inside to outside, the measurement product comprises a dielectric layer, a tunneling oxide layer and a polycrystalline silicon layer which are sequentially located on a crystalline silicon substrate from inside to outside, and the tunneling oxide layer and the polycrystalline silicon layer in the using product are consistent with the tunneling oxide layer and the polycrystalline silicon layer in the measuring product respectively; and S2, data measurement is performed on the determination product and / or the use product, and / or comparative analysis is performed on a data determination result to obtain a final determination conclusion. Compared with the prior art, according to the technical scheme provided by the invention, the method has the advantages that the method is not influenced by the surface morphology of the crystalline silicon substrate, and the measurement result is accurate, convenient and fast.

Description

technical field [0001] The present application relates to the field of crystalline silicon solar cells, in particular to a method for measuring data of a polysilicon layer in a TOPCon passivation contact structure. Background technique [0002] In the field of crystalline silicon solar cells, the surface passivation structure has always been the top priority of design and optimization in the industry. In 2019, the Institute for Solar Energy Systems Hamelin (ISFH), Germany, based on the theory of carrier selectivity, made a detailed analysis of the theoretical efficiency limits of solar cells with different structures, and pointed out that the theoretical efficiency limits of solar cells using "passivated contact structures" As high as 28.7%, in 2020, the Fraunhofer Institute for Solar Energy Systems (Fraunhofer ISE) in Germany reported a TOPCon passivated contact structure solar cell with a conversion efficiency of 26.0%. [0003] Because the TOPCon passivation contact stru...

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Problems solved by technology

[0004] However, in the process of actually measuring these data, for example, when it is necessary to measure the square resistance of the doped polysilicon layer, since the carriers can pass through the tunnel oxide layer without hindrance, the measurement results obtained are often the difference between the polysilicon layer and the crystal. The square resistance of the parallel connection of the silicon substrate, the measurement result is not accurate; Optical film thickness on the polished plane); for another example, when it is necessary to know the specific position of the tunnel oxide layer in the TOPCon passivation contact structure, although secondary ion mass spectrometry (SIMS) can perform micro-region composition imaging and depth analysis to The curve of doping concentration changing with depth is obtained, but SIMS still requires polysilicon film to be prepared on a polished plane, so it is difficult to obtain relevant data on the suede surface, and SIMS testing equipment is expensive and expensive to test, which cannot meet the needs of solar cell manufacturers. Very frequent testing requirements

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