Work piece coating and its preparation method and application
A workpiece and coating technology, applied in the field of parts processing, can solve problems such as reduction, loss of protection effect, and decrease in material toughness
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[0029] The invention provides a method for preparing a workpiece coating, comprising alternately depositing a first film layer and a second film layer on a workpiece by physical vapor deposition:
[0030] The first film layer is deposited under a bias voltage of 0V to -200V, with a thickness of 100nm to 200nm;
[0031] The second film layer is deposited under a bias voltage of -300V to -2000V, with a thickness of 5nm to 30nm;
[0032] The material of the first film layer and the material of the second film layer are independently selected from metal carbide and metal nitride.
[0033] When there is a coherent grain boundary in the coating, due to the certain adjustment of the grain direction, the external force has a certain buffering effect, which can prevent the external force from being transmitted along the continuous grain direction when the coating is impacted, which will directly cause the entire coating Therefore, the existence of coherent grain boundaries can make th...
Embodiment 1
[0075] (1) Workpiece cleaning: ultrasonically clean the silicon wafer with ethanol, then rinse with deionized water, and dry it with dry compressed air; place the silicon wafer cleaned by ethanol on the workpiece support of the vacuum chamber, and evacuate the vacuum chamber , until the vacuum reaches 1.0×10 -3 Pa, then turn on the ion source, feed the argon gas with a flow rate of 400 sccm into the vacuum chamber, and keep the overall air pressure of the vacuum chamber at 1Pa; set the ion source power to 1kW, set the bias voltage of the workpiece support to -1000V, and clean for 30 stop after minutes;
[0076] (2) deposition of Cr / CrNx transition layer: feed the argon gas with a flow rate of 200 sccm to the vacuum chamber, and control the overall air pressure of the vacuum chamber to be 0.6Pa; meanwhile, the bias voltage of the silicon wafer is set to -100V, and the arc evaporation source is turned on. Set the arc current to 100A, and gradually feed high-purity nitrogen gas ...
Embodiment 2
[0082] (1) Workpiece cleaning: ultrasonically clean the stainless steel sheet with ethanol, then rinse it with deionized water, and dry it with dry compressed air; place the stainless steel sheet cleaned by ethanol on the workpiece support of the vacuum chamber, and evacuate the vacuum chamber , until the vacuum reaches 1.0×10 -3 Pa, then turn on the ion source, feed the argon gas with a flow rate of 400 sccm into the vacuum chamber, and keep the overall air pressure of the vacuum chamber at 1Pa; set the ion source power to 1kW, set the bias voltage of the workpiece support to -1000V, and clean for 30 stop after minutes;
[0083] (2) Deposit W / WCx transition layer: Introduce argon gas with a flow rate of 200 sccm into the vacuum chamber, control the overall air pressure of the vacuum chamber to be 0.6Pa; simultaneously set the bias voltage of the stainless steel to -200V, turn on the arc evaporation source, set The arc current is 100A, and high-purity acetylene is gradually i...
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Abstract
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