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Method for preparing p-type 4H-SiC by co-doping IVB group atoms and aluminum

An IVB family, 4h-sic technology, applied in chemical instruments and methods, diffusion/doping, single crystal growth, etc., can solve the problems of high resistivity, low carrier concentration, high aluminum ionization energy, and achieve low resistance rate, reduce ionization energy, and increase the effect of effective concentration

Active Publication Date: 2021-08-20
ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem of high ionization energy and low carrier concentration of the dopant aluminum in the existing p-type 4H-SiC, which makes the defect of relatively large resistivity, and provides a method to reduce the ionization energy of Al impurities. A method for preparing p-type 4H-SiC by co-doping the IVB group atoms and aluminum of the p-type silicon carbide material with low resistivity. The present invention will introduce an empty impurity orbital e energy level after doping with the IVB group atoms, and The e orbitals occupied by 3 / 4 of Al can form effective Coulomb repulsion

Method used

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  • Method for preparing p-type 4H-SiC by co-doping IVB group atoms and aluminum
  • Method for preparing p-type 4H-SiC by co-doping IVB group atoms and aluminum
  • Method for preparing p-type 4H-SiC by co-doping IVB group atoms and aluminum

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Embodiment 1

[0052] This embodiment provides a method for preparing p-type 4H-SiC by co-doping group IVB atoms and aluminum, including the following steps:

[0053] 1) Select silicon carbide powder with a powder purity of 99.999% or more and a particle size of 100-150 μm; select Al with a purity of 99.99% and a particle size of 200-250 μm 4 C 3 as Al source;

[0054] Will Al 4 C 3 Put the powder into a small-diameter graphite crucible and place it at the center of the cylindrical graphite crucible. Put the silicon carbide powder at the bottom of the cylindrical graphite crucible. The distance between the mixture seed crystal and the source powder is 20-40 mm. Put the silicon carbide seed crystal Placed on the top of the crucible in the growth furnace, the crucible is heated by radio frequency induction and insulated with graphite felt;

[0055] 2) After forming a closed environment in the crucible, evacuate the crucible furnace until the air pressure in the furnace reaches 10 -3 ~10 ...

Embodiment 2

[0059] This embodiment provides a method for preparing p-type 4H-SiC by co-doping group IVB atoms and aluminum, including the following steps:

[0060] 1) Select silicon carbide powder with a powder purity of 99.999% or more and a particle size of 100-150 μm; select Al with a purity of 99.99% and a particle size of 200-250 μm 4 C 3 as Al source;

[0061] Will Al 4 C 3 Put the powder into a small-diameter graphite crucible and place it at the center of the cylindrical graphite crucible. Put the silicon carbide powder at the bottom of the cylindrical graphite crucible. The distance between the mixture seed crystal and the source powder is 20-40 mm. Put the silicon carbide seed crystal Placed on the top of the crucible in the growth furnace, the crucible is heated by radio frequency induction and insulated with graphite felt;

[0062] 2) After forming a closed environment in the crucible, evacuate the crucible furnace until the air pressure in the furnace reaches 10 -3 ~10 ...

Embodiment 3

[0065] This embodiment provides a method for preparing p-type 4H-SiC by co-doping group IVB atoms and aluminum, including the following steps:

[0066] 1) Select silicon carbide powder with a powder purity of 99.999% or more and a particle size of 100-150 μm; select Ti with a purity of 98.00% and a particle size of 100 μm 3 AlC 2 As Al source and Ti source;

[0067] Ti 3 AlC 2 Put the powder into a small-diameter graphite crucible and place it at the center of the cylindrical graphite crucible. Put the silicon carbide powder at the bottom of the cylindrical graphite crucible. The distance between the mixture seed crystal and the source powder is 20-40 mm. Put the silicon carbide seed crystal Placed on the top of the crucible in the growth furnace, the crucible is heated by radio frequency induction and insulated with graphite felt;

[0068] 2) After forming a closed environment in the crucible, evacuate the crucible furnace until the air pressure in the furnace reaches 10 ...

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Abstract

The invention relates to a method for preparing p-type 4H-SiC by co-doping IVB group atoms and aluminum. According to the preparation method, the aluminum atoms and IVB group atoms are doped into 4H-SiC, so that the ionization energy of aluminum in a silicon carbide crystal is effectively reduced, and the preparation of low-resistance p-type 4H-SiC is realized. After the IVB group atoms are doped, an empty impurity orbital e energy level is introduced to form effective coulomb repulsion with an e orbital occupied by 3 / 4 of Al, so that the ionization energy of Al impurities is reduced. The doping concentration of the IVB group atoms is ensured to be more than 1017 cm <-3 >, and the doping concentration of the aluminum atoms is ensured to be about 1020 cm <-3 >. The problem that the ionization energy of the aluminum atoms in 4H-SiC is high is solved, the effective concentration of carriers in silicon carbide is increased, the resistivity of the 4H-SiC silicon carbide crystal is reduced; and the method has important significance on manufacturing of various electronic devices in the field of power electronics.

Description

technical field [0001] The invention belongs to the field of silicon carbide crystal growth, and in particular relates to a method for co-doping IVB (Ti / Zr / Hf) and aluminum to prepare low-resistance p-type 4H-SiC. Background technique [0002] Silicon carbide (SiC) can meet the new requirements of modern society for high temperature, high power, high voltage, high frequency and radiation resistance due to its outstanding advantages such as higher saturation drift speed and higher critical breakdown voltage, and has small size, pollution Economic and environmental benefits such as less operating loss. Silicon carbide is expected to be used in power devices, high-frequency devices, high-temperature operating devices, and the like. Silicon carbide power semiconductor devices began to be developed in the 1970s. After 30 years of accumulation, silicon carbide SBD devices were commercialized in 2001, and silicon carbide MOSFET devices were commercialized in 2010. Current silicon...

Claims

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Application Information

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IPC IPC(8): C30B31/02C30B31/16C30B29/36
CPCC30B31/165C30B31/02C30B29/36
Inventor 皮孝东徐所成王蓉黄渊超钱怡潇杨德仁
Owner ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
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